Abstract
GaInP/AlGaInP triple quantum well (TQW) lasers, grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), were fabricated with a pulsed anodic oxidation (PAO) process. The devices worked at room temperature (RT) with the lowest threshold current density (Jth) of 1.5 kA/cm2 ever reported for GaInP/AlGaInP lasers grown using TBAs and TBP. Temperature dependent (35–250 K) electroluminescence (EL) study of the GaInP/AlGaInP laser diode showed almost the same luminescence quenching behavior at a high temperature region (120–250 K), independent of the injection current (100–150 mA). A model involving a nonradiative recombination mechanism was presented to interpret the EL quenching behavior over the experimental temperature range. The nonradiative recombination centers in the Al-containing barrier or cladding layer are believed to contribute to the loss of carriers via nonradiative recombination.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D.P. Bour, R.S. Geels, D.W. Treat, T.L. Paoli, F. Ponce, R.L. Thornton, B.S. Krusor, R.D. Bringans, D.F. Welch, IEEE J. Quantum Electron. QE-30, 593 (1994)
B. Ma, S. Cho, C. Lee, Y. Kim, Y. Park, IEEE Photon. Technol. Lett. 17, 1375 (2005)
A. Chen, S.J. Chua, G.C. Xing, W. Ji, X.H. Zhang, J.R. Dong, L.K. Jian, E.A. Fitzgerald, Appl. Phys. Lett. 90, 011113 (2007)
T. Terakado, K. Tsuruoka, T. Ishida, T. Nakamura, K. Fukushima, S. Ae, A. Uda, T. Torikai, T. Uji, Electron. Lett. 31, 2182 (1995)
B.X. Bo, X.H. Tang, B.L. Zhang, G.S. Huang, Y.C. Zhang, T.S. Chuan, Japan. J. Appl. Phys. 43, 3410 (2004)
K. Itaya, A.L. Holmes, S. Keller, S.G. Hummel, L.A. Coldren, S.P. DenBaars, Japan. J. Appl. Phys. 34, L1540 (1995)
J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, H.R. Yuan, S. Yuan, Appl. Phys. Lett. 83, 596 (2003)
C.Y. Liu, S. Yuan, J.R. Dong, S.J. Chua, M.C.Y. Chan, S.Z. Wang, J. Appl. Phys. 94, 2962 (2003)
D.W. Zabrowski, R.R. Rice, A.P. Specht, J. Appl. Phys. 59, 2293 (1986)
A. Hori, D. Yasunaga, A. Satake, K. Fujiwara, J. Appl. Phys. 93, 3152 (2003)
S. Nakatsuka, M. Kondow, M. Aoki, M. Kudo, T. Kitatani, S. Tsuji, Japan. J. Appl. Phys. 42, L1012 (2003)
S. Yuan, C. Jagadish, Y. Kim, Y. Chang, H.H. Tan, R.M. Cohen, M. Petravic, L.V. Dao, M. Gal, M.C.Y. Chan, E.H. Li, S.O. Jeong, P.S. Zory Jr., IEEE J. Sel. Top. Quantum Electron. 4, 629 (1998)
C.Y. Liu, S.F. Yoon, S.Z. Wang, W.J. Fan, Y. Qu, S. Yuan, IEEE Photon. Technol. Lett. 16, 2409 (2004)
Y. Qu, J.X. Zhang, A. Uddin, C.Y. Liu, S. Yuan, M.C.Y. Chan, B. Bo, G. Liu, H. Jiang, Appl. Phys. A 82, 305 (2006)
C.Y. Liu, S.F. Yoon, Q. Cao, C.Z. Tong, H.F. Li, Appl. Phys. Lett. 90, 041103 (2007)
P. Michler, A. Hangleiter, M. Moser, M. Geiger, F. Scholz, Phys. Rev. B 46, 7280 (1992)
E.M. Daly, T.J. Glynn, J.D. Lambkin, L. Considine, S. Walsh, Phys. Rev. B 52, 4696 (1995)
M.J. Chen, J.F. Chang, J.L. Yen, C.S. Tsai, E.Z. Liang, C.F. Lin, C.W. Liu, J. Appl. Phys. 93, 4253 (2003)
J.M. Kim, C.Y. Park, Y.T. Lee, J.D. Song, J. Appl. Phys. 100, 093503 (2006)
Y.P. Varshni, Physica 34, 149 (1967)
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
78.60.Fi; 71.20.Nr; 78.67.De; 81.15.Gh; 42.55.Px
Rights and permissions
About this article
Cite this article
Liu, C., Yoon, S., Teng, J. et al. Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine. Appl. Phys. A 91, 435–439 (2008). https://doi.org/10.1007/s00339-008-4419-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-008-4419-0