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A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface

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Abstract

We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires. The high-speed electrical signal measurements from the photoconductor are performed by an integrated coplanar waveguide transmission line. The demonstrated ability to grow intersecting InP nanowires on hydrogenated microcrystalline Si surfaces will facilitate the construction of ultra-fast photodetectors on a wide range of substrates.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA, 95616, USA

    V.J. Logeeswaran, A. Sarkar & M.S. Islam

  2. Jack Baskin School of Engineering, University of California at Santa Cruz, Santa Cruz, CA, 95064, USA

    N.P. Kobayashi

  3. Quantum Science Research, Advanced Studies, Hewlett-Packard Laboratories, Palo Alto, CA, 94304, USA

    J. Straznicky, Xuema Li, Wei Wu, Sagi Mathai, M.R.T. Tan, Shih-Yuan Wang & R.S. Williams

Authors
  1. V.J. Logeeswaran
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  2. A. Sarkar
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  3. M.S. Islam
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  4. N.P. Kobayashi
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  5. J. Straznicky
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  6. Xuema Li
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  7. Wei Wu
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  8. Sagi Mathai
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  9. M.R.T. Tan
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  10. Shih-Yuan Wang
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  11. R.S. Williams
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Corresponding author

Correspondence to M.S. Islam.

Additional information

PACS

61.46.Km; 42.70.-a; 81.16.Hc; 81.05.Ea; 85.60.Dw

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Logeeswaran, V., Sarkar, A., Islam, M. et al. A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface. Appl. Phys. A 91, 1–5 (2008). https://doi.org/10.1007/s00339-007-4394-x

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  • DOI: https://doi.org/10.1007/s00339-007-4394-x

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