Structural and compositional analyses of nanocrystalline diamond/β-SiC composite films

Abstract

Nanocrystalline diamond/β-SiC composite films are synthesized by microwave plasma chemical vapor deposition using a gas mixture of H₂, CH₄, and tetramethylsilane (Si(CH₃)₄, TMS) in a single process step. Structural and compositional analyses revealed that the films consist of a mixture of diamond and β-SiC nanocrystalline phases in a desired volume fraction combinatorial form. Transmission electron microscopy analysis confirmed the X-ray diffraction results and showed that the major diffraction lines corresponded to a two-component nanocrystalline composite film. Infrared spectroscopic analysis showed that the content of β-SiC in the films can be increased by increasing the TMS concentration. This correlated very well with electron probe microanalysis and Rutherford backscattering analysis that showed an almost linear correspondence of β-SiC content in the films with the TMS concentration in the gas phase. The phase purity of the diamond crystallites decreased with increase in the β-SiC content in the films, as shown by micro Raman scattering studies. Smooth surface morphologies are measured for these films by using atomic force microscopy; the root mean square roughness was 12 ± 1 nm. The β-SiC volume fraction (vol. %) was identified as an important compositional factor to determine any mechanical and frictional properties of these films.