Abstract
The morphology of cleavage surfaces across grain boundaries in free-standing silicon thin films was investigated. Three ridge–boundary interaction modes were identified. If the cleavage ridge was relatively deep, it could directly bypass a grain boundary. If it was relatively shallow, it would act as a stress concentrator promoting cleavage front transmission. It was also observed that due to the smoothening effect, the surface could become effectively less rough across a grain boundary.
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82.45.Mp; 85.30.De; 61.72.Mm; 60.20.Mk
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Chen, J., Qiao, Y. Interaction of cleavage ridges with grain boundaries in polysilicon films. Appl. Phys. A 91, 127–130 (2008). https://doi.org/10.1007/s00339-007-4380-3
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DOI: https://doi.org/10.1007/s00339-007-4380-3