Abstract
Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior is observed in the AlN/Si structure, which is attributed to the trapping and detrapping of charges in deep traps of the AlN layer. In the long-term retention mode, a clear memory window is found 2000 s after removing a program/erase voltage of ±3 V, indicating good charge retention capability of the MIS structure. Further investigation shows that for a program pulse width of 500 ms, the charge storage does not occur when the pulse amplitude is smaller than a threshold value of ∼1 V. The trapped charge density increases linearly with increase of the pulse amplitude (>1 V) and tends to saturate at 2.5 V. With increasing program pulse width, the trapped charged density increases a little more than logarithmically.
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73.40.Kp; 72.20.Jv; 71.55.Eq
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Kong, Y., Hu, L., Zheng, Y. et al. Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer. Appl. Phys. A 90, 545–548 (2008). https://doi.org/10.1007/s00339-007-4319-8
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DOI: https://doi.org/10.1007/s00339-007-4319-8