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Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser

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Abstract

The influence of gallium arsenide surface modification induced by irradiation with a KrF excimer laser on the magnitude of the quantum well (QW) intermixing effect has been investigated in InAlGaAs/AlGaAs/GaAs QW heterostructures. The irradiation in an air environment with laser pulses of fluences between 60 and 100 mJ/cm2 has resulted in the formation of a gallium oxide-rich film at the surface. Following the annealing at 900 °C, up to 35 nm suppression of the band gap blue shift was observed in all the laser irradiated samples when compared to the non-irradiated samples. The origin of suppression has been discussed in terms of stress controlled diffusion.

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Authors and Affiliations

  1. Centre de recherche en Nanofabrication et Nanocaractériasation (CRN2), Département de Génie Électrique et Génie Informatique, Université de Sherbrooke, Sherbrooke, Québec, J1K 2R1, Canada

    J. Genest, J.J. Dubowski & V. Aimez

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  1. J. Genest
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  2. J.J. Dubowski
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  3. V. Aimez
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Correspondence to J.J. Dubowski.

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PACS

78.55.Et; 66.30.Lw; 73.21.Fg

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Genest, J., Dubowski, J. & Aimez, V. Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser. Appl. Phys. A 89, 423–426 (2007). https://doi.org/10.1007/s00339-007-4230-3

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  • DOI: https://doi.org/10.1007/s00339-007-4230-3

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