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Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures

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Abstract

Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300–450 °C, has been investigated. As Ts increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance–electric field (C–E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C.

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Authors and Affiliations

  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, 30010, Taiwan, R.O.C.

    Jyh-Liang Wang, Bi-Shiou Chiou, Trent Gwo-Yann Lee, Huai-Yuan Tseng, Chueh-Kuei Jan & Huang-Chung Cheng

  2. Department of Materials Science and Engineering, National United University, Miaoli, 36003, Taiwan, R.O.C.

    Yi-Sheng Lai

  3. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan, R.O.C.

    Chen-Chia Chou

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  1. Jyh-Liang Wang
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  2. Yi-Sheng Lai
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  3. Bi-Shiou Chiou
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  4. Chen-Chia Chou
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  5. Trent Gwo-Yann Lee
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  6. Huai-Yuan Tseng
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  7. Chueh-Kuei Jan
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  8. Huang-Chung Cheng
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Correspondence to Jyh-Liang Wang.

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PACS

81.15.Fg; 77.22.Ch; 68.60.Dv

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Wang, JL., Lai, YS., Chiou, BS. et al. Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures. Appl. Phys. A 90, 129–134 (2008). https://doi.org/10.1007/s00339-007-4224-1

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  • DOI: https://doi.org/10.1007/s00339-007-4224-1

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