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Influence of boron distribution on the transport of single-walled carbon nanotube

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Abstract

Using density functional theory combined with nonequilibrium Green’s functions, we investigated and found that boron substitutional doping affects the transport properties of single-walled carbon nanotubes with different distribution. The results reveal that the semiconducting nanotube transits to the quasi-metallic state with nonlinear current–voltage curve after boron doping. Some regular regions of total transmission coefficient with integral values appear with the varying of electron energy and bias voltage. The transport properties of the doped tubes are affected remarkably by the impurity states of quasi-bound defect states which are tuned by the distance between the boron atoms. The current of metallic nanotube is reduced by the impurities and changed with doping patterns.

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Authors and Affiliations

  1. College of Physics and Microelectronic Sciences, Hunan University, Changsha, 410082, P.R. China

    J.-W. Wei, H.-F. Hu, H. Zeng, Z.-Y. Wang, L. Wang & L.-J. Zhang

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  1. J.-W. Wei
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  2. H.-F. Hu
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  3. H. Zeng
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  4. Z.-Y. Wang
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  5. L. Wang
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  6. L.-J. Zhang
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Correspondence to H.-F. Hu.

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PACS

72.80.Rj; 73.22.2f; 73.61.Wp; 73.63.Rt

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Wei, JW., Hu, HF., Zeng, H. et al. Influence of boron distribution on the transport of single-walled carbon nanotube. Appl. Phys. A 89, 789–792 (2007). https://doi.org/10.1007/s00339-007-4176-5

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  • DOI: https://doi.org/10.1007/s00339-007-4176-5

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