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Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

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Abstract

A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field.

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Authors and Affiliations

  1. Electrocom Corporation, P.O. Box 60317, Potomac, MD, 20859-0317, USA

    A. Khan

  2. Department of Physics and Techno Physics, Vidyasagar University, Midnapore, 721102, West Bengal, India

    A. Das

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  1. A. Khan
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  2. A. Das
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Correspondence to A. Khan.

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PACS

72.20.-I; 73.50.-h

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Khan, A., Das, A. Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands. Appl. Phys. A 89, 695–699 (2007). https://doi.org/10.1007/s00339-007-4160-0

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