Abstract
Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO2 due to overcompensation with oxygen vacancies. The Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode-like) properties of Gd-doped HfO2 to silicon heterojunctions are demonstrated.
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References
M. McCoy, Chem. Eng. News 83, 26 (2005)
B.H. Lee, L. Kang, W.-J. Qi, R. Nieh, K. Onishi, J.C. Lee, Tech. Dig. Int. Electron. Dev. Meet. 1999, 133 (1999)
M. Gutowski, J.E. Jaffe, C.-L. Liu, M. Stoker, R.I. Hegde, R.S. Raj, P.J. Tobin, Appl. Phys. Lett. 80, 1897 (2002)
K.P. Bastos, J. Morais, L. Miotti, R.P. Pezzi, G.V. Soares, I.J.R. Baumvol, R.I. Hegde, H.H. Tseng, P.J. Tobin, Appl. Phys. Lett. 81, 1669 (2002)
S. Dhar, O. Brandt, M. Ramsteiner, V.F. Sapega, K.H. Ploog, Phys. Rev. Lett. 94, 037205 (2005)
S. Dhar, L. Pérez, O. Brandt, A. Trampert, K.H. Ploog, J. Keller, B. Beschoten, Phys. Rev. B 72, 245203 (2005)
S. Dhar, T. Kammermeir, A. Ney, L. Pérez, K.H. Ploog, A. Melnikov, A.D. Wieck, Appl. Phys. Lett. 89, 062503 (2006)
L. Pérez, G.S. Lau, S. Dhar, O. Brandt, K.H. Ploog, Phys. Rev. B 74, 195207 (2006)
K. Potzger, S.-Q. Zhou, F. Eichhorn, M. Helm, W. Skorupa, A. Mücklich, J. Fassbender, T. Herrmannsdorfer, A. Bianchi, J. Appl. Phys. 99, 063906 (2006)
M. Venkatesan, C.B. Fitzgerald, J.D.M. Coey, Nature 430, 630 (2004)
W. Wang, Y. Hong, M. Yu, B. Rout, G.A. Glass, J. Tang, J. Appl. Phys. 99, 08M117 (2006)
K.S. Shah, L. Cirignano, R. Grazioso, M. Klugerman, P.R. Bennet, T.K. Gupta, W.W. Moses, M.J. Weber, S.E. Derenzo, http://breast.lbl.gov/∼wwwinstr/publications/Papers/LBNL-50253.pdf (2001)
S.F. Mughabghab, Neutron Cross Sections, vol. 1 (Academic Press, Ney York, 1981)
P.L. Reeder, Nucl. Instrum. Methods Phys. Res. A 353, 134 (1994)
B. Gebauer, C. Schulz, T. Wilpert, Nucl. Instrum. Methods Phys. Res. A 392, 68 (1997)
A. Mireshghi, G. Cho, J.S. Drewery, W.S. Hong, T. Jing, H. Lee, S.N. Kaplan, V. Perez-Mendez, IEEE Trans. Nucl. Sci. 41, 915 (1994)
D.I. Garber, R.R. Kinsey, BNL 325: Neutron Cross Sections, vol. 2, 3rd edn. (Brookhaven National Laboratory, Upton, 1976)
A.N. Caruso, R.B. Billa, S. Balaz, J.I. Brand, P.A. Dowben, J. Phys. C Condens. Matter 16, L139 (2004)
A.N. Caruso, P.A. Dowben, S. Balkir, N. Schemm, K. Osberg, R.W. Fairchild, O.B. Flores, S. Balaz, A.D. Harken, B.W. Robertson, J.I. Brand, Mater. Sci. Eng. B 135, 129 (2006)
K. Osberg, N. Schemm, S. Balkir, J.I. Brand, S. Hallbeck, P. Dowben, IEEE Sens. J. 6, 1531 (2006)
T. Komesu, H.-K. Jeong, J. Choi, C.N. Borca, P.A. Dowben, A.G. Petukhov, B.D. Schultz, C.J. Palmstrøm, Phys. Rev. B 67, 035104 (2003)
C.-G. Duan, T. Komesu, H.-K. Jeong, C.N. Borca, W.-G. Yin, J. Liu, W.N. Mei, P.A. Dowben, A.G. Petukhov, B.D. Schultz, C.J. Palmstrøm, Surf. Rev. Lett. 11, 531 (2004)
O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Mathon, N.T. Barrett, P. Besson, Appl. Phys. Lett. 81, 3627 (2002)
S. Suzer, S. Sayan, M.M. Banaszak Holl, E. Garfunkel, Z. Hussain, N.M. Hamdan, J. Vac. Sci. Technol. A 21, 106 (2003)
S. Sayan, T. Emge, E. Garfunkel, X. Zhao, L. Wielunski, R.A. Bartynski, D. Vanderbilt, J.S. Suehle, S. Suzer, M.M. Banaszak Holl, J. Appl. Phys. 96, 7485 (2004)
S. Sayan, R.A. Bartynski, X. Zhao, E.P. Gusev, D. Vanderbilt, M. Croft, M.M. Banaszak Holl, S. Suzer, Phys. Stat. Solidi B 241, 2246 (2004)
M. Komatsu, R. Yasuhara, H. Takahashi, S. Toyoda, H. Kumigashira, M. Oshima, D. Kukuruznyak, T. Chikyow, Appl. Phys. Lett. 89, 172107 (2006)
P.A. Dowben, D. Li, J. Zhang, M. Onellion, J. Vac. Sci. Technol. A 13, 1549 (1995)
T. Kachel, R. Rochow, W. Gudat, R. Jungblut, O. Rader, C. Cabone, Phys. Rev. B 45, 7276 (1992)
R.F. Sabirianov, W.N. Mei, J. Lu, Y. Gao, X.C. Zeng, R.D. Bolskar, P. Jeppson, N. Wu, A.N. Caruso, P.A. Dowben, J. Phys. C Condens. Matter 19, 082201 (2007)
A.J. Freeman, B.I. Min, M.R. Norman, in Handbook on the Physics and Chemistry of Rare Earths, vol. 10, ed. by K.A. Gschneider, L. Eyring, S. Hüfner (Elsevier, Amsterdam, 1987), p. 165
T.V. Perevalov, V.A. Gritsenko, S.B. Erenburg, A.M. Badalyan, H. Wong, C.W. Kim, J. Appl. Phys. 101, 053704 (2007)
J. Wang, H.P. Li, R. Stevens, J. Mater. Sci. 27, 5397 (1992)
E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet, M.D. Russell, G. van Tendeloo, B. Pelissier, Appl. Phys. Lett. 89, 012902 (2006)
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Ketsman, I., Losovyj, Y., Sokolov, A. et al. The n-type Gd-doped HfO2 to silicon heterojunction diode. Appl. Phys. A 89, 489–492 (2007). https://doi.org/10.1007/s00339-007-4154-y
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DOI: https://doi.org/10.1007/s00339-007-4154-y