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Image-potential-induced surface state at Si(100)

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Abstract

We have identified a surface state on Si(100) (2×1) at a binding energy of 0.69±0.05 eV with respect to the vacuum level. Band-structure calculations within the GW method reveal that almost 80% of the probability density of the resonance is located in front of the surface. We therefore assign the surface resonance to an image-potential state. It has a lifetime of about 10 fs and contributes significantly to two-photon photoemission from Si(100).

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Authors and Affiliations

  1. Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstr. 7, 91058, Erlangen, Germany

    M. Kutschera & T. Fauster

  2. Max-Born-Institut, Max-Born-Str. 2A, 12489, Berlin, Germany

    M. Weinelt

  3. Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069, Osnabrück, Germany

    M. Rohlfing

Authors
  1. M. Kutschera
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  2. M. Weinelt
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  3. M. Rohlfing
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  4. T. Fauster
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Correspondence to M. Weinelt.

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PACS

73.20.At; 79.60.Bm; 79.60.Dp; 79.60.Ht

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Kutschera, M., Weinelt, M., Rohlfing, M. et al. Image-potential-induced surface state at Si(100). Appl. Phys. A 88, 519–526 (2007). https://doi.org/10.1007/s00339-007-4074-x

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  • DOI: https://doi.org/10.1007/s00339-007-4074-x

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