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CVD growth of carbon nanotubes at very low pressure of acetylene

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Abstract

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport measurements.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High Purity Materials, RAS, Chernogolovka, 142432, Moscow region, Russia

    Y.A. Kasumov, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev & A.Y. Kasumov

  2. Laboratoire de Physique des Solides, Associé au CNRS, Bâtiment 510, Université Paris-Sud, 91405, Orsay, France

    A. Shailos, S. Guéron, M. Kobylko, M. Kociak, H. Bouchiat & A.Y. Kasumov

  3. Institut d’Electronique de Microélectronique et de Nanotechnologie, CNRS, BP 60069, 59652, Villeneuve d’Ascq, France

    V. Agache, A.S. Rollier & L. Buchaillot

  4. Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, 38042, Grenoble Cedex, France

    A.M. Bonnot

Authors
  1. Y.A. Kasumov
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  2. A. Shailos
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  3. I.I. Khodos
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  4. V.T. Volkov
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  6. V.N. Matveev
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  7. S. Guéron
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  8. M. Kobylko
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  9. M. Kociak
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  10. H. Bouchiat
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  11. V. Agache
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  12. A.S. Rollier
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  13. L. Buchaillot
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  14. A.M. Bonnot
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  15. A.Y. Kasumov
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Corresponding author

Correspondence to A.Y. Kasumov.

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PACS

85.35.Kt; 81.16.Be

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Kasumov, Y., Shailos, A., Khodos, I. et al. CVD growth of carbon nanotubes at very low pressure of acetylene. Appl. Phys. A 88, 687–691 (2007). https://doi.org/10.1007/s00339-007-4028-3

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  • DOI: https://doi.org/10.1007/s00339-007-4028-3

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