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Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation

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Abstract

Germanium atomic (Ge1 +) and molecular ions (Ge2 +) of equal energy per atom are implanted in silicon at an elevated temperature. The ion induced damage has been monitored by following the intensity variation of the LO Raman peak of Si. The germanium implanted samples have been labeled with 10 keV Au ions. The gettering of gold has been observed by Rutherford backscattering spectrometry in the post-annealed samples. This paper reports a first time observation of an enhanced gettering of gold in silicon implanted with molecular ions.

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Authors and Affiliations

  1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603102, India

    C. David, B. Sundaravel, T.R. Ravindran, K.G.M. Nair & B.K. Panigrahi

  2. Institute of Physics, Bhubaneswar, 751005, India

    H.P. Lenka, B. Joseph & D.P. Mahapatra

Authors
  1. C. David
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  2. B. Sundaravel
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  3. T.R. Ravindran
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  4. K.G.M. Nair
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  5. B.K. Panigrahi
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  6. H.P. Lenka
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  7. B. Joseph
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  8. D.P. Mahapatra
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Corresponding author

Correspondence to C. David.

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PACS

61.72.Ji; 61.80.Lj; 61.80.Jh; 61.72.Yx

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David, C., Sundaravel, B., Ravindran, T. et al. Observation of an enhanced gettering effect in silicon under germanium molecular ion implantation. Appl. Phys. A 88, 397–400 (2007). https://doi.org/10.1007/s00339-007-3996-7

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  • DOI: https://doi.org/10.1007/s00339-007-3996-7

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