Abstract
The characteristics of phase change memory devices in size of several micrometers and with pure Ge2Sb2Te5 (GST), N-doped GST, and Si-doped GST films were investigated and compared with each other. The Si-doped GST device can perform SET and RESET cycles, even if the Si dopant is as small as 4.1 at. %. But the GST and N-doped GST device cannot perform the RESET process, though the SET state resistance of N-doped device is almost the same as that of Si-doped device and larger than that of GST device. In order to explain this phenomenon, the electrical and DSC characteristics of three kinds of films were investigated. Phase separation was found in Si-doped GST films. The reason of the RESET ability of Si-doped GST devices is supposed to be the existence of rich Si phases which act as micro-heaters. Thermal conduction simulations confirmed this supposition and indicate that the separated high resistance phase (rich Si phase) can heat the active volume of device efficiently and reduce the writing current largely.
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71.55.Gs; 71.55.Jv; 74.81.Bd; 85.30-z
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Feng, J., Zhang, Y., Qiao, B. et al. Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory. Appl. Phys. A 87, 57–62 (2007). https://doi.org/10.1007/s00339-006-3851-2
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DOI: https://doi.org/10.1007/s00339-006-3851-2