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Einstein relation in chemically doped organic semiconductors

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Abstract

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field.

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Authors and Affiliations

  1. Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, Lanzhou, 730000, P.R. China

    Y.-Q. Peng, J.-H. Yang, F.-P. Lu, Q.-S. Yang, H.-W. Xing, X.-S. Li & C.-A. Song

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  1. Y.-Q. Peng
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  2. J.-H. Yang
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  3. F.-P. Lu
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  4. Q.-S. Yang
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  5. H.-W. Xing
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  6. X.-S. Li
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  7. C.-A. Song
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Correspondence to Y.-Q. Peng.

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PACS

71.20.Rv; 72.90.+y; 73.50.-h

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Peng, YQ., Yang, JH., Lu, FP. et al. Einstein relation in chemically doped organic semiconductors. Appl. Phys. A 86, 225–229 (2007). https://doi.org/10.1007/s00339-006-3747-1

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  • DOI: https://doi.org/10.1007/s00339-006-3747-1

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