Abstract
Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00–2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 100–10-3 Ω cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver–indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13–1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV).
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U.K. Barik, S. Srinivasan, C.L. Nagendra, A. Subrahmanyam, Thin Solid Films 429, 129 (2003)
J. Asbalter, A. Subrahmanyam, J. Vac. Sci. Technol. 18, 1672 (2000)
H. Kawazoe, H. Yanagi, K. Ueda, H. Hosono, MRS Bull. 25, 28 (2000)
T. Minami, K. Shimokawa, T. Miyata, J. Vac. Sci. Technol. A 16, 1218 (1998)
A. Subrahmanyam, U.K. Barik, J. Phys. Chem. Solids 66, 817 (2005)
J.E. Clayton, D.P. Cann, N. Ashmore, Thin Solid Films 411, 140 (2002)
D.K. Schroder, Semiconductor Material and Device Characterization, 1st edn. (Wiley, New York, 1990), p. 30
C. Suresh Kumar, A. Subrahmanyam, J. Majhi, Rev. Sci. Instrum. 67, 805 (1996)
J.S. Escher, in Semiconductors and Semimetals, vol. 15, ed. by R.K. Willardson, A.C. Beer (Academic, New York, 1981), p. 196
C. Kittel, Introduction to Solid State Physics, eighth reprint (Wiley Eastern, New Delhi, 1988), p. 170
E.H. Putley, Hall Effect and Related Phenomena (Butterworths, London, 1960)
J.P. McKelvey, Solid State and Semiconductor Physics (Harper International Edition, New York, 1966)
N.W. Ashcroft, N.D. Mermin, Solid State Physics (Holt Saunders International Editions, Japan, 1981)
R.H. Williams, R.R. Varma, A. McKinley, J. Phys. C Solid State Phys. 10, 4545 (1977)
A.R. West, Solid State Chemistry and its Applications, revised edn. (Wiley, New York, 1984), p. 290
J. Szczyrbowski, A. Dietrich, H. Hoffmann, Phys. Stat. Solidi A 78, 243 (1983)
K. Kubota, Y. Kobayashi, K. Fujimoto, J. Appl. Phys. 66, 2984 (1989)
J. Tauc, R. Grigorovici, A. Vancu, Phys. Stat. Solidi 15, 627 (1966)
J. Szczyrbowski, A. Dietrich, H. Hoffmann, Phys. Stat. Solidi A 69, 217 (1982)
N. Balasubramanian, A. Subrahmanyam, J. Phys. D Appl. Phys. 22, 206 (1989)
L. Gupta, A. Mansingh, P.K. Srivastsva, Thin Solid Films 176, 33 (1989)
E. Staritzky, Anal. Chem. 28, 553 (1956)
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PACS
73.30.+y; 81.15.Cd; 78.20.Ci; 73.61.Le
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Subrahmanyam, A., Barik, U. Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen. Appl. Phys. A 84, 221–225 (2006). https://doi.org/10.1007/s00339-006-3606-0
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DOI: https://doi.org/10.1007/s00339-006-3606-0