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Transport properties of InSb nanowire arrays

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Abstract

Single-crystalline InSb nanowire arrays were prepared by pulsed electrochemical deposition into anodic alumina membranes, and subjected to characterization using X-ray diffraction, field emission scanning electron microscope and transmission electron microscopy. A nonlinear I–V characteristic and a decreased resistance with temperature were observed in InSb nanowire arrays. The mechanisms of the different temperature dependencies of the resistance of InSb nanowires with different diameters were discussed.

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Authors and Affiliations

  1. Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P.R. China

    Y.W. Yang, L. Li, X.H. Huang, M. Ye, Y.C. Wu & G.H. Li

  2. College of Material Science and Engineering, Hefei University of Technology, Hefei, 230009, P.R. China

    Y.W. Yang, M. Ye & Y.C. Wu

Authors
  1. Y.W. Yang
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  2. L. Li
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  3. X.H. Huang
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  4. M. Ye
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  5. Y.C. Wu
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  6. G.H. Li
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Corresponding author

Correspondence to G.H. Li.

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PACS

67.55.Hc; 73.63.Bd; 61.82.Fk

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Yang, Y., Li, L., Huang, X. et al. Transport properties of InSb nanowire arrays. Appl. Phys. A 84, 7–9 (2006). https://doi.org/10.1007/s00339-006-3585-1

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  • DOI: https://doi.org/10.1007/s00339-006-3585-1

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