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Synthesis and size differentiation of Ge nanocrystals in amorphous SiO2

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Abstract

Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700–1010 °C for durations of 5 to 60 min. Transmission electron microscopy (TEM) was used to investigate Ge nanocrystal formation in SiO2:Ge films. High-resolution cross section TEM images, electron energy-loss spectroscopy and energy dispersive X-ray analysis (EDX) data indicate that Ge nanocrystals are present in the amorphous silicon dioxide films. These nanocrystals are formed in two spatially separated layers with average sizes of 15 and 50 nm, respectively. EDX analysis indicates that Ge also diffuses into the Si substrate.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Illinois, 1304 West Green Street, Urbana, IL, 61801, USA

    S. Ağan & J.M. Zuo

  2. Department of Nuclear, Plasma and Radiological Engineering, University of Illinois, 103 South Goodwin, Urbana, IL, 61801, USA

    A. Çelik-Aktaş

  3. Physics Department, Bilkent University, 06800, Ankara, Turkey

    A. Dana & A. Aydınlı

  4. Physics Department, Kırıkale University, 71451, Kırıkale, Turkey

    S. Ağan

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  1. S. Ağan
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  2. A. Çelik-Aktaş
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  3. J.M. Zuo
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  4. A. Dana
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  5. A. Aydınlı
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Corresponding author

Correspondence to A. Aydınlı.

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PACS

68.73.Lp; 61.46.Hk; 61.46.-w; 68.65.Hb; 61.82.Rx

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Ağan, S., Çelik-Aktaş, A., Zuo, J. et al. Synthesis and size differentiation of Ge nanocrystals in amorphous SiO2 . Appl. Phys. A 83, 107–110 (2006). https://doi.org/10.1007/s00339-005-3464-1

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  • DOI: https://doi.org/10.1007/s00339-005-3464-1

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