Abstract
Thermal chemical vapor deposition of fluorinated carbon thin films in the polymeric form is described by hot filament decomposition of the gaseous C3F6O precursor. Decomposition at filament temperatures, ≤450 °C produces films in the ordered (CF2)2n polymeric chain structure as in a tetrafluoroethylene polymer. A composite of (CF2)2n chains structure and crosslinked m(C:Fx)n phases are formed in films deposited at filament temperature ≥600 °C. Polymerization of :CF2 radicals results in (CF2)2n chain structure and the crosslinked phase emerges from a separate process involving reaction among the CF3, CFO and CF3CO radicals and including CF2. Substrate temperature affects both the C-to-F bonding configuration and the relative ratio of the composite phases. Dominant C–CF bonding structure in the low (<-5 °C) substrate temperature films is thermally less stable compared to the C–F structure, which dominates the crosslinked structure in films deposited at high (∼70 °C) substrate temperatures. Dielectric properties of the composite films are studied using the electrical equivalent model and a correlation with the C-to-F bond structure is established. High polymeric (CF2)2n phase determines the electrical impedance and the dielectric constant of the film, and the crosslinked phase imparts structural stability.
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81.15.Gh; 73.61.Ph; 77.84.Jd; 79.60.Fr
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Rastogi, A., Desu, S. Characterization of low pressure chemical vapor deposited polymeric fluorinated carbon m (C:FX)n thin films with low dielectric constant. Appl. Phys. A 83, 57–66 (2006). https://doi.org/10.1007/s00339-005-3435-6
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DOI: https://doi.org/10.1007/s00339-005-3435-6