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Enhancement of weak anti-localization signatures in the magneto-resistance of bismuth anti-dot thin films

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Abstract

Anti-dot array thin films of bismuth were prepared by the e-beam deposition of this semi-metal on nano-porous substrates. The magneto-resistance measurements of bismuth thin films deposited under identical conditions on various substrates displayed signatures from both classical magneto-resistance and weak anti-localization effects. The relative intensity of the two effects could be altered by the choice of the substrate, with the anti-dot array morphology suppressing the classical magneto-resistance, and enhancing the weak anti-localization contribution to the measured magneto-resistance. As a result, the weak anti-localization effect can be traced to higher magnetic field strengths and higher temperatures than is possible in non-patterned films, improving the accuracy of the parameters extracted from the data.

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Authors and Affiliations

  1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, MA, 02139-4307, USA

    O. Rabin

  2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139-4307, USA

    K. Nielsch

  3. Department of Physics and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139-4307, USA

    M.S. Dresselhaus

Authors
  1. O. Rabin
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  2. K. Nielsch
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  3. M.S. Dresselhaus
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Correspondence to M.S. Dresselhaus.

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PACS

73.20.Fz; 73.23-b; 73.61.At

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Rabin, O., Nielsch, K. & Dresselhaus, M. Enhancement of weak anti-localization signatures in the magneto-resistance of bismuth anti-dot thin films. Appl. Phys. A 82, 471–474 (2006). https://doi.org/10.1007/s00339-005-3383-1

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  • DOI: https://doi.org/10.1007/s00339-005-3383-1

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