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Thin ZnO films prepared by chemical solution deposition on glass and flexible conducting substrate

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Abstract

Thin films of zinc oxide (ZnO) are deposited by a simple method of successive immersion of substrate in (NH4)2ZnO2(0.1 M) chemical solution and in boiling water. Films of a thickness ≈ 500 nm could be deposited on stainless steel and glass by 40 immersions. The composition, structure, optical bandgap and the charge transport mechanism were determined and the results are presented. Films are stoichiometric and have the same hexagonal lattice parameters as for powder samples. Films are formed from grains with a mean size of a few 100 nm. Grains consist of crystallites of mean size 20–30 nm. For films deposited on stainless steel, the crystallites are highly oriented along their c-axis perpendicular to the substrate. Films have a high optical transparency (above 80%) in the visible region and bandgap energy in the range 3.38–3.42 eV. Films are intrinsically n-type and the charge transport across the films is controlled by a shallow trapping level in accordance with the Poole–Frenkel mechanism. The doubly-ionized trapping level has a concentration of 4×1011 cm-3 and zero-field ionization energy of 110 meV. Adsorption of oxygen by annealing the films in air yields a singly-ionized trap.

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  1. Physics Department, Faculty of Science, Kuwait University, PO Box 5969, Safat, 13060, Kuwait

    A.E. Rakhshani

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  1. A.E. Rakhshani
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Correspondence to A.E. Rakhshani.

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PACS

81.15.Lm; 81.05.Dz; 68.37.Hk; 73.61.Ga

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Rakhshani, A. Thin ZnO films prepared by chemical solution deposition on glass and flexible conducting substrate. Appl. Phys. A 81, 1497–1502 (2005). https://doi.org/10.1007/s00339-005-3288-z

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