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The study of the interaction of indium with tellurium in silicon

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Abstract

The perturbed γ–γ angular correlation method has been employed to study indium-impurity pairs in silicon, consisting of the probe atom (111In/111Cd) and several group-VI donors. Such pairs can be identified via the interaction between the quadrupole moments of the probe nucleus and the electric field gradient (EFG) associated with the formed defect complex. A new quadrupole interaction frequency (QIF) of νQ=444(1) MHz (η=0) is measured at T=293 K in Te implanted silicon after annealing the sample above 700 K. The complex is attributed to the In-Te pair along 〈100〉-crystal axis in silicon. In addition, the temperature dependence of the QIF characterizing the pair has also been studied. The implantations of S and Se could not lead to the formation of observable complexes despite similar treatment of all samples.

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Authors and Affiliations

  1. Faculty of Science, Department of Physics, Addis Ababa University, P.O. BOX 1176, Addis Ababa, Ethiopia

    G. Tessema

  2. Helmholtz-Institut für Strahlen und Kernphysik, Nussalle 14–16, 53115, Bonn, Germany

    R. Vianden

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  1. G. Tessema
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  2. R. Vianden
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Correspondence to G. Tessema.

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61.72.-y; 76.80.+y; 61.72.Cc

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Tessema, G., Vianden, R. The study of the interaction of indium with tellurium in silicon. Appl. Phys. A 81, 1471–1476 (2005). https://doi.org/10.1007/s00339-005-3249-6

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  • DOI: https://doi.org/10.1007/s00339-005-3249-6

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