Skip to main content
SpringerLink
Log in

Effect of implantation energy and dose on low-dose SIMOX structures

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

In order to form silicon (Si)-on-insulator (SOI) layers with various thicknesses, oxygen implantation with doses between 1.0×1017/cm2 and 6.0×1017/cm2 and at energies between 40 and 240 keV has been carried out into 300 mm diameter (100)Si wafers at a temperature of 560 °C. After implantation, Si wafers are annealed in dry Ar mixed with 1% O2 at a temperature of 1350 °C for 4 h. The quality of buried oxide (BOX) layers and the microstructure in implanted layers before and after annealing is characterized by transmission electron microscopy. The results reveal that the appreciable number of threading dislocations (TDs) is generated in SOI layers implanted at energies above 200 keV under the optimum dose-energy conditions for the continuous BOX layer formation. Whereas, in the case of discontinuous BOX layers, the TD generation is observed in samples implanted at energies above 120 keV. The generation of TDs is discussed with the emphasis on the effect of implantation energy.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G.K. Celler, S. Critroloveanu: J. Appl. Phys. 93, 4955 (2003)

    Article  ADS  Google Scholar 

  2. F. Namavar, E. Cortesi, B. Buchanan, Sioshansi: Proc. 1989 IEEE SOS/SOI Technology Conf. (IEEE, New York 1989) p. 117

  3. S. Nakashima, K. Izumi: J. Mater. Res. 8, 523 (1993)

    Article  ADS  MathSciNet  Google Scholar 

  4. G.F. Cerofolini, S. Bertoni, L. Meda, C. Spaggiari: Mater. Sci. Eng. B 22, 172 (1994)

    Article  Google Scholar 

  5. S. Krause, M. Anc, P. Roitman: MRS Bull. 23, 25 (1998)

    Article  Google Scholar 

  6. A. Uedono, S. Tanigawa, Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikada : J. Appl. Phys. 87, 1659 (2000)

    Article  ADS  Google Scholar 

  7. A. Ogura, H. Ono: Appl. Surf. Sci. 159–160, 104 (2000)

    Google Scholar 

  8. J. Jias, B. Johnson, S. Seraphin, M.J. Anc, R.P. Dolan, B.F. Cordts: Mater. Sci. Eng. B 72, 150 (2000)

    Article  Google Scholar 

  9. M. Chen, X. Wang, J. Chen, X. Liu, Y. Dong, Y. Yu, X. Wang: App. Phys. Lett. 80, 880 (2002)

    Article  ADS  Google Scholar 

  10. K. Tokiguchi, T. Seki, J. Ito, T. Sato, K. Mera: Rev. Sci. Instrum. 71, 952 (2000)

    Article  ADS  Google Scholar 

  11. S. Bagchi, S.J. Krause, P. Roitman: Appl. Phys. Rett. 71, 2136 (1997)

    ADS  Google Scholar 

  12. J.P. Biersack, L.G. Haggmark: Nucl. Instrum. Methods 174, 257 (1980)

    Article  ADS  Google Scholar 

  13. Y. Li, J.A. Kilner, A.K. Robinson, P.L. Hemment, C.D. Marsh: J. Appl. Phys. 70, 3605 (1991)

    Article  ADS  Google Scholar 

  14. S. Zuoyu, L. Chenglu, Z. Wenhua, P.L. Hemment, U. Bussmann, Z. Shichang : Nucl. Instrum. Methods B 74, 210 (1993)

    Article  ADS  Google Scholar 

  15. G.F. Cerofolini, S. Bertoni, L. Meda, C. Spaggiari: Semicond. Sci. technol. 11, 398 (1996)

    Article  ADS  Google Scholar 

  16. S. Nakashima, T. Katayama, Y. Miyamura, A. matsuzaki, M. Kataoka, D. Ebi, M. Imai, K. Izumi, N. Ohwada: J. Elechtrochem. Soc. 143, 244 (1996)

    Article  Google Scholar 

  17. D. Venables, K.S. Jones: Nucl. Instrum. Methods B 74, 65 (1993)

    Article  ADS  Google Scholar 

  18. J. Stoemenos: Nucl. Instrum. Methods B 112, 206 (1996)

    Article  ADS  Google Scholar 

  19. W.P. Maszara: J. Appl. Phys. 64, 123 (1988)

    Article  ADS  Google Scholar 

  20. M.K. El-Ghol, S.J. Pennycook, E. Namavar, N.H. Karam: Appl. Phys. Lett. 57, 156 (1990)

    Article  ADS  Google Scholar 

  21. D. Venables, K.S. Jones, F. Namavar, J.M. Manke: Mater. Res. Soc. Proc. 235, 103 (1992)

    Article  Google Scholar 

  22. M. Tamura: Phil. Mag. 35, 663 (1977)

    Article  ADS  Google Scholar 

  23. A.K. Mazzone: Phys. Status Solidi 95a, 149 (1986)

    Article  ADS  Google Scholar 

  24. M. Tamura, Y. Hiroyama, A. Nishida, M. Horiuchi: Appl. Phys. A 66, 373 (1998)

    Article  ADS  Google Scholar 

  25. M. Tamura, Y. Hiroyama, A. Nishida: Mat. Chem. Phys. 54, 23 (1998)

    Article  Google Scholar 

  26. E. Prieu, C. Guilhalmenc, J. Hartwig, M. Ohler, A. Garcia, B. Aspar: J. Appl . Phys. 80, 2113 (1996)

    Article  ADS  Google Scholar 

  27. S. Bagchi, J.D. Lee, S.J. Krause, P. Roitman: J. Electron. Mater. 22, 7 (1996)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka, 565-0871, Japan

    M. Tamura & H. Mori

  2. Power & Industrial Systems R&D Laboratory, Hitachi Ltd., 7-2-1 Ohmika-cho, Hitachi-shi, Ibaraki, 319-1221, Japan

    K. Tokiguchi & H. Seki

  3. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan

    M. Ishimaru

Authors
  1. M. Tamura
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Tokiguchi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Seki
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Ishimaru
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H. Mori
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Tamura.

Additional information

PACS

61.72Ff; 61.72Lk

Rights and permissions

Reprints and permissions

About this article

Cite this article

Tamura, M., Tokiguchi, K., Seki, H. et al. Effect of implantation energy and dose on low-dose SIMOX structures. Appl. Phys. A 81, 1375–1383 (2005). https://doi.org/10.1007/s00339-005-3248-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-005-3248-7

Keywords

Search

Navigation