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Pushing the limits of macroporous silicon etching

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Abstract

We present a detailed investigation of the fabrication of almost perfect three-dimensional microstructures grown by a photoelectrochemical etching process. The focus is directed on the physical effects that have limited the achievable pore shapes to very smooth modulations. These limits can be overcome by an improved etching process allowing strongly modulated three-dimensional networks. In particular, the chronology of the growth of a single modulation is shown.

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References

  1. E. Yablonovitch: Phys. Rev. Lett. 58, 2059 (1987)

    Article  Google Scholar 

  2. S. John: Phys. Rev. Lett. 58, 2486 (1987)

    Article  Google Scholar 

  3. S. Matthias, F. Müller, C. Jamois, R.B. Wehrspohn, U. Gösele: Adv. Mater. 16, 2166 (2004)

    Article  Google Scholar 

  4. V. Lehmann, H. Föll: J. Electrochem. Soc. 137, 653 (1990)

    Google Scholar 

  5. V. Lehmann: J. Electrochem. Soc. 140, 2836 (1993)

    Google Scholar 

  6. V. Lehmann, U. Grüning: Thin Solid Films 297, 13 (1997)

    Article  Google Scholar 

  7. J. Schilling, F. Müller, S. Matthias, R.B. Wehrspohn, U. Gösele, K. Busch: Appl. Phys. Lett. 78, 1180 (2001)

    Article  Google Scholar 

  8. H.W. Lau, G.J. Parker, R. Greef: Thin Solid Films 276, 29 (1996)

    Article  Google Scholar 

  9. V. Lehmann: Electrochemistry of Silicon (Wiley-VCH, Weinheim 2002)

  10. H. Föll, M. Christophersen, J. Carstensen, G. Hasse: Mater. Sci. Eng. R 39, 93 (2002)

    Article  Google Scholar 

  11. X.G. Zhang: J. Electrochem. Soc. 151, C69 (2004)

  12. X.G. Zhang: Electrochemistry of Silicon and its Oxides (Kluwer Academic, New York 2001)

  13. J. Schilling, R.B. Wehrspohn, A. Birner, F. Müller, R. Hillebrand, U. Gösele, S.W. Leonard, J.P. Mondia, F. Genereux, H.M. van Driel, P. Kramper, V. Sandoghdar, K. Busch: J. Opt. A: Pure Appl. Opt. 3, 121 (2001)

    Article  Google Scholar 

  14. X.G. Zhang: J. Electrochem. Soc. 138, 3750 (1991)

    Google Scholar 

  15. F. Müller, A. Birner, J. Schilling, U. Gösele, C. Kettner, P. Hänggi: Phys. Status Solidi A 182, 585 (2000)

    Article  Google Scholar 

  16. S. Matthias, F. Müller: Nature 424, 53 (2003)

    Google Scholar 

  17. V. Lehmann, R. Stengl, A. Luigart: Mater. Sci. Eng. B 69, 11 (2000)

    Article  Google Scholar 

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Authors and Affiliations

  1. Max Planck Institute of Microstructure Physics, Weinberg 2 , Halle, 06120, Germany

    S. Matthias, F. Müller, J. Schilling & U. Gösele

  2. California Institute of Technology, 1200 East California Boulevard, Pasadena, California, 91125, USA

    J. Schilling

Authors
  1. S. Matthias
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  2. F. Müller
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  3. J. Schilling
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  4. U. Gösele
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Correspondence to S. Matthias.

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PACS

82.45.Cc; 82.45.Vp

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Matthias, S., Müller, F., Schilling, J. et al. Pushing the limits of macroporous silicon etching. Appl. Phys. A 80, 1391–1396 (2005). https://doi.org/10.1007/s00339-004-3193-x

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  • DOI: https://doi.org/10.1007/s00339-004-3193-x

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