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Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers

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Abstract

Thin films of relaxor ferroelectric Pb(Mg,Nb)O3-PbTiO3 with different orientations were grown by pulsed-laser deposition on Si(100). By using (111)-, (110)- and (100)-oriented MgO thin film as buffer and the LaNiO3 thin film as a bottom electrode, (110)- and (100)- oriented or preferred and polycrystalline PMN-PT thin films were obtained. The (110)-oriented PMN-PT thin film showed dielectric permittivity of about 1350 and loss factor cosδ of <0.07.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures Physics and Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, China

    X.Y. Chen, G.X. Chen, J.M. Liu, M. Wang & Z.G. Liu

  2. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

    X.Y. Chen, J. Wang, K.H. Wong & C.L. Mak

Authors
  1. X.Y. Chen
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  2. J. Wang
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  3. K.H. Wong
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  4. C.L. Mak
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  5. G.X. Chen
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  6. J.M. Liu
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  7. M. Wang
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  8. Z.G. Liu
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Correspondence to X.Y. Chen.

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PACS

68.55.Jk; 81.15.Fg; 77.84.Dy

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Chen, X., Wang, J., Wong, K. et al. Growth of orientation-controlled Pb(Mg,Nb)O3-PbTiO3 thin films on Si(100) by using oriented MgO films as buffers. Appl. Phys. A 81, 1145–1149 (2005). https://doi.org/10.1007/s00339-004-3068-1

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  • DOI: https://doi.org/10.1007/s00339-004-3068-1

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