Skip to main content
SpringerLink
Log in

Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The calibration factors for the determination of boron and phosphorus concentration in single crystal silicon by low temperature Fourier transform infrared spectroscopy are examined, with the aim of comparing the behaviour of float-zone and Czochralski samples. It is shown that common calibration factors, derived from a correlation with four-point probe resistivity measurement, can be applied to both material types. Moreover, no significant difference in carrier mobility is observed between FZ and CZ, as determined by Hall effect measurements, in a wide oxygen range: 2–9×1017 cm-3, confirming that the same conversion algorithm to deduce the carrier concentration from the resistivity measurement can be applied.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. ASTM F723-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

  2. ASTM F1630-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

  3. DIN 50438-3, Determination of impurity content in silicon by means of infra-red absorption, part 3: boron and phosphorus, DIN Deutsche Institut für Normung, Beuth Verlag GmbH, 10772 Berlin

  4. H.C. Alt, M. Gellon, M.G. Pretto, R. Scala, F. Bittersberger, K. Hesse, A. Kempf: Characterization and Metrology for ULSI Technology: 1998 International Conference, D.G. Seiler, A.C. Diebold, W.M. Bullis, T.J. Shaffner, R. McDonald, E.J. Walters Eds. The American Institute of Physics, 1998 p. 201

  5. ASTM F84-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

  6. A.W. Stephens, M.A. Green: J. Appl. Phys. 74, 6212 (1993)

    Article  ADS  Google Scholar 

  7. ASTM F76-99, The 1999 Annual Book of ASTM Standards, American Society for Testing and Materials

  8. H. Nakagawa, S. Zukotinski: Canadian J. Phys. 56, 364 (1978)

    Article  ADS  Google Scholar 

  9. F. Mousty, P. Ostoja, L. Passari: J. Appl. Phys. 45, 4576 (1974)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. MEMC Electronic Materials, via Nazionale 59, 39012, Merano, Italy

    M. Porrini, M.G. Pretto & R. Scala

  2. Institute of Rare Metals, B. Tolmachevskiy per. 5, 1091017, Moscow, Russia

    A.V. Batunina

  3. Fachhochschule München, 80335, München, Germany

    H.C. Alt

  4. Polysilcon & Silica, Wacker-Chemie GmbH, 84489, Burghausen, Germany

    R. Wolf

Authors
  1. M. Porrini
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M.G. Pretto
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Scala
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A.V. Batunina
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H.C. Alt
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. R. Wolf
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Porrini.

Additional information

PACS

72.80; 78.30; 81.05

Rights and permissions

Reprints and permissions

About this article

Cite this article

Porrini, M., Pretto, M., Scala, R. et al. Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy. Appl. Phys. A 81, 1187–1190 (2005). https://doi.org/10.1007/s00339-004-3032-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-004-3032-0

Keywords

Search

Navigation