Applied Physics A

, Volume 79, Issue 4–6, pp 1521–1523 | Cite as

Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

  • H. Hiramatsu
  • K. Ueda
  • K. Takafuji
  • H. Ohta
  • M. Hirano
  • T. Kamiya
  • H. Hosono
Article

Abstract

Electrical and photoluminescence properties were investigated for epitaxial films of layered oxychalcogenides, LnCuOCh (Ln = La, Pr, and Nd, Ch = S or Se). Epitaxial films of Mg 10 at. % doped LaCuOS1-xSex are the first demonstration of degenerate conduction with high hole concentration >1020 cm-3 in wide gap p-type semiconductors. Ion substitution varied the excitonic emission energy from 3.21 eV to 2.89 eV while lanthanide and chalcogenide ion substitutions displayed the opposite tendency against cell volume. These unique properties are discussed with respect to the electronic structure originating from the layered crystal structure.

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Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • H. Hiramatsu
    • 1
  • K. Ueda
    • 2
  • K. Takafuji
    • 2
  • H. Ohta
    • 1
  • M. Hirano
    • 1
  • T. Kamiya
    • 1
    • 2
  • H. Hosono
    • 1
    • 2
  1. 1.Hosono Transparent Electro-Active Materials Project, ERATOJapan Science and Technology AgencyTokyoJapan
  2. 2.Materials and Structures LaboratoryTokyo Institute of TechnologyTokyoJapan

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