Applied Physics A

, Volume 79, Issue 4–6, pp 1517–1520 | Cite as

Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

  • H. Hiramatsu
  • K. Ueda
  • K. Takafuji
  • H. Ohta
  • M. Hirano
  • T. Kamiya
  • H. Hosono
Article

Abstract

Heteroepitaxial thin films of Cu-based oxychalcogenides, LnCuOCh (Ln = La, Pr and Nd; Ch = mixture of S and Se), were fabricated and their resulting film structures were characterized. A reactive solid-phase epitaxy method successfully yielded heteroepitaxial films on MgO(001) substrates. A high-resolution electron microscopic examination of a LaCuOS film revealed a sharp film-substrate interface. Four-axes high-resolution X-ray diffraction measurements revealed that crystalline lattices in the films are fully relaxed and that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO. Furthermore, systematic variations in the lattice constant by lanthanide or chalcogen ion substitutions were observed.

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Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • H. Hiramatsu
    • 1
  • K. Ueda
    • 2
  • K. Takafuji
    • 2
  • H. Ohta
    • 1
  • M. Hirano
    • 1
  • T. Kamiya
    • 1
    • 2
  • H. Hosono
    • 1
    • 2
  1. 1.Hosono Transparent Electro-Active Materials Project, ERATOJapan Science and Technology AgencyTokyoJapan
  2. 2.Materials and Structures LaboratoryTokyo Institute of TechnologyTokyoJapan

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