Skip to main content
SpringerLink
Log in

Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Cubic boron nitride (cBN) films were deposited by rf bias-assisted dc plasma-jet chemical vapor deposition. Effects of H2 flow rate and bias voltage on the growth of the cBN films were investigated. High phase purity cBN (over 90%) can be obtained in a wide range of H2 flow rates of 5–10 sccm and bias voltages from -50 to -100 V. Nearly phase pure cBN films were deposited at a H2 flow rate of 10 sccm and bias voltages of -60 V and -70 V. The deposited films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, and glancing angle X-ray diffraction. Raman peaks were observed for all the cBN films, which indicate a good crystallinity of the films.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P.B. Mirkarimi, K.F. McCarty, D.L. Medlin: Mater. Sci. Eng. 21, 47 (1997)

    Article  Google Scholar 

  2. C. Ronning, E. Dreher, H. Feldermann, M. Gross, M. Sebastian, H. Hofsass: Diamond Relat. Mater. 6, 1129 (1997)

    Article  ADS  Google Scholar 

  3. K. Inagawa, K. Watanabe, H. Ohsone, K. Saitoh, A. Itoh: J. Vac. Sci. Technol. A 5, 2696 (1987)

    Article  ADS  Google Scholar 

  4. S. Mineta, M. Kolrata, N. Yasunaga, Y. Kikuta: Thin Solid Films 189, 125 (1990)

    Article  ADS  Google Scholar 

  5. M. Mieno, T. Yoshida: Jpn. J. Appl. Phys. 29, 1175 (1990)

    Article  ADS  Google Scholar 

  6. D.J. Kester, R. Messier: J. Appl. Phys. 72, 504 (1992)

    Article  ADS  Google Scholar 

  7. N. Tanabe, T. Hayashi, M. Iwaki: Diamond Relat. Mater. 1, 883 (1992)

    Article  ADS  Google Scholar 

  8. D.R. McKenzie, W.D. McFall, W.G. Sainty, C.A. Davis, R.E. Collins: Diamond Relat. Mater. 2, 970 (1993)

    Article  ADS  Google Scholar 

  9. M.P. Johansson, I. Ivanoz, L. Hultman, P. Munger, A. Schutze: J. Vac. Sci. Technol. A 14, 3100 (1996)

    Article  ADS  Google Scholar 

  10. S. Kidner, C.A. Taylor II, R. Clarke: Appl. Phys. Lett. 64, 1859 (1994)

    Article  ADS  Google Scholar 

  11. A. Chayahara, H. Yokoyama, T. Imura, Y. Osaka: Jpn. J. Appl. Phys. 26, 1435 (1987)

    Article  ADS  Google Scholar 

  12. A. Weber, U. Bringmann, R. Nikulski, C.P. Klarges: Surf. Coat. Technol. 60, 493 (1993)

    Article  Google Scholar 

  13. W. Dworschak, K. Jung, H. Ehrhardt: Diamond Relat. Mater. 3, 337 (1994)

    Article  ADS  Google Scholar 

  14. T. Ichiki, T. Momose, T. Yoshida: J. Appl. Phys. 75, 1330 (1994)

    Article  ADS  Google Scholar 

  15. M. Kuhr, S. Reinke, W. Kulish: Diamond Relat. Mater. 4, 375 (1995)

    Article  ADS  Google Scholar 

  16. K.L. Barth, A. Lunk, J. Ulmer: Surf. Coat. Technol. 92, 96 (1997)

    Article  Google Scholar 

  17. D. Litvinov, R. Clarke: Appl. Phys. Lett. 74, 955 (1999)

    Article  ADS  Google Scholar 

  18. K. Yamamoto, M. Keunecke, K. Bewilloga: Thin Solid Films 377–378, 331 (2000)

  19. S. Matsumoto, W.J. Zhang: Jpn. J. Appl. Phys. 39, 442 (2000)

    Article  ADS  Google Scholar 

  20. S. Matsumoto, W.J. Zhang: Diamond Relat. Mater. 10, 1868 (2001)

    Article  ADS  Google Scholar 

  21. W.J. Zhang, S. Matsumoto: J. Mater. Res. 15, 2677 (2000)

    Article  ADS  Google Scholar 

  22. Y.K. Le, H. Oechsner: Thin Solid Films 437, 83 (2003)

    Article  ADS  Google Scholar 

  23. K. Nose, K. Tachibana, T. Yoshida: Appl. Phys. Lett. 83, 943 (2003)

    Article  ADS  Google Scholar 

  24. W.J. Zhang, S. Matsumoto: Chem. Phys. Lett. 330, 243 (2000)

    Article  ADS  Google Scholar 

  25. W.J. Zhang, S. Matsumoto: Appl. Phys. A 71, 469 (2000)

    Article  ADS  Google Scholar 

  26. W.J.S. Matsumoto, Q. Li, I. Bello, S.T. Lee: Adv. Funct. Mater. 12, 250 (2002)

    Article  Google Scholar 

  27. M. Mieno: Jpn. J. Appl. Phys. II 36, 1236 (1997)

    Article  ADS  Google Scholar 

  28. T. Werninghaus, J. Hahn, F. Richter, D.R.T. Zahn: Appl. Phys. Lett. 70, 958 (1997)

    Article  ADS  Google Scholar 

  29. T. Kuzuba, K. Era, T. Ishii, T. Sato: Solid State Commun. 25, 863 (1978)

    Article  ADS  Google Scholar 

  30. H. Saitoh, W.A. Yarbrough: Appl. Phys. Lett. 58, 2228 (1991)

    Article  ADS  Google Scholar 

  31. A.F. Jankowski, J.P. Hayes, D.M. Makowiecki, M.A. McKeman: Thin Solid Films 308, 94 (1997)

    Article  ADS  Google Scholar 

  32. M.B. Mekki, M.A. Djouadi, V. Mortet, E. Guiot, G. Nouet, N. Mestres: Thin Solid Films 355–356, 89 (1999)

  33. C.E. Bottani, R. Checchetto, A. Miotello, P.M. Ossi: Surf. Coat. Technol. 151–152, 151 (2002)

    Google Scholar 

  34. W.M. Holber, J. Forster: J. Vac. Sci. Technol. A 8, 3727 (1990)

    Article  ADS  Google Scholar 

  35. W. Klass, R. Hauber, B. Lux: Diamond Relat. Mater. 7, 369 (1998)

    Article  ADS  Google Scholar 

  36. S. Matsumoto, N. Nishida, K. Akashi, K. Sugai: J. Mater. Sci. 31, 713 (1996)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Institute for Materials Science, Advanced Materials Laboratory, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan

    J. Yu, S. Matsumoto & K. Okada

Authors
  1. J. Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. Matsumoto
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Okada
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. Matsumoto.

Additional information

PACS

61.10.Eq; 78.30.-j; 81.15.Gh

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yu, J., Matsumoto, S. & Okada, K. Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition. Appl. Phys. A 80, 777–781 (2005). https://doi.org/10.1007/s00339-004-2744-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-004-2744-5

Keywords

Search

Navigation