Abstract
Epitaxial growth of non-polar wurtzite (11-20) AlN thin films was achieved on a Si(100) substrate by inserting an MnS buffer layer. The a-plane AlN film and MnS buffer layer were fabricated by pulsed KrF excimer laser deposition, and their micro- and interfacial atomic structures were investigated by transmission electron microscopy. The epitaxial relationship between films and substrate was found to be AlN(11-20)∥MnS(100)∥Si(100) with in-plane alignment of AlN[1-101]∥MnS[011]∥Si[011]. AlN[11-20] grown on Si is perpendicular to AlN[0001] and parallel to MnS[100]. The MnS/Si interface is abrupt enough to inherit the orientation of the Si(100) surface. A sharp interface was also observed for AlN/MnS without any intermediate layer.
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81.05.Ea; 81.05.Zx; 81.15.Fg; 68.37.Lp
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Song, J., Yoo, Y., Chikyow, T. et al. Structural and interfacial stabilities of epitaxial (11-20)-oriented wurtzite AlN films grown on lattice-matched MnS buffered Si(100). Appl. Phys. A 79, 457–460 (2004). https://doi.org/10.1007/s00339-004-2664-4
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DOI: https://doi.org/10.1007/s00339-004-2664-4