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Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

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Abstract

Polycrystalline thin film transistors (poly-Si TFTs) were fabricated using the 5-μs-rapid joule heating method. The optimum condition of 0.77 J/cm2 for crystallization was determined through analysis of transfer characteristics of poly-Si TFTs. The density of the tail-type defect states decreased from 1.4×1012 to 9.5×1011 cm-2 and the carrier mobility increased from 300 cm2/Vs to 760 cm2/Vs as the joule heating energy density increased from 0.68 to 0.77 J/cm2. The threshold voltage of the drain current ranged between 0.9 and 1.15 V.

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Authors and Affiliations

  1. Tokyo University of Agriculture and Technology, 2-24-16, Nakamachi, Koganei, Tokyo, 184-8588, Japan

    T. Sameshima, K. Motai & N. Andoh

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  1. T. Sameshima
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  2. K. Motai
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  3. N. Andoh
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Correspondence to T. Sameshima.

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PACS

85.30.De; 61.72.Bb; 81.10.Jt; 02.60.Cb

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Sameshima, T., Motai, K. & Andoh , N. Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method. Appl. Phys. A 79, 599–603 (2004). https://doi.org/10.1007/s00339-004-2544-y

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  • DOI: https://doi.org/10.1007/s00339-004-2544-y

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