A contribution to the theory of the C–V technique for the evaluation of carrier-concentration profiles in semiconductors

Abstract

An extension of the previously developed theory (the integral capacitance technique (ICT)) for the evaluation of the carrier-concentration profile in semiconductors is presented. It is shown that there is a possibility to determine the space-charge density at the edge of a depletion layer straightforwardly from experiment, without additional calculation procedures. This gives a sufficient advantage of the method proposed against those previously developed owing to excluding from the consideration the whole range of the C–V data, which are necessary for the ICT or DCT (differential capacitance technique) implementation. The method is based on the combination of a traditional C–V differential capacitance measurement and the measurement of the proper capacitance (integral capacitance) performed separately and at the same value of the applied voltage.