Abstract
A closed-form expression for the current–voltage relationship of pin diodes and pin solar cells is obtained. The model considers drift and diffusion currents, and assumes a uniform electric field in the intrinsic layer, equal diffusion lengths for electrons and holes and a homogeneous generation rate. We show that both drift and diffusion currents must be taken into account to describe the current over a wide range of applied voltage. The inclusion of both transport mechanisms results in diode ideality factors between 1.8 at low, and 1.2 at high applied voltages. Comparisons of current/voltage characteristics and solar cell output parameters obtained from our model with experimental data of thin-film silicon solar cells show that our model accurately explains the output characteristics of pin solar cells.
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References
W. Shockley: Bell Syst. Tech. J. 28, 435 (1949)
D.E. Carlson, C.R. Wronski: Appl. Phys. Lett. 28, 671 (1976)
H. Keppner, J. Meier, P. Torres, D. Fischer, A. Shah: Appl. Phys. A 69, 173 (1999)
K. Yamamoto, M. Yoshimi, Y. Tawada, Y. Okamoto, A. Nakajima, S. Igari: Appl. Phys. A 69, 179 (1999)
H.G. Wagemann, H. Eschrich: Grundlagen der Photovoltaischen Energiewandlung (Teubner, Stuttgart 1994) p. 112
R. Crandall: J. Appl. Phys. 54, 7176 (1983)
H. Okamoto, H. Kida, S. Nomomura, K. Fukumoto, Y. Hamakawa: J. Appl. Phys. 54, 3236 (1983)
S.M. Sze: Physics of Semiconductor Devices, 2nd edn. (Wiley, New York 1981) p. 75
C. Sah, R. Noyce, W. Shockley: Proc. IRE 45, 1228 (1957)
E. Rhoderick, R. Williams: Metal–Semiconductor Contacts (Clarendon Press, Oxford, 1988) p. 93, Equation (3.5). The expression for the current JCR given in this paper is obtained from Eq. (3.5), assuming a decrease of the quasi-Fermi level of kT between x=0, x=W/2
P.A. Basore: IEEE Trans. Electron Dev. 37, 337 (1990)
See [8] p. 85
See [8] p. 51
See [8] p. 56
A. Fahrenbruch, R. Bube: Fundamentals of Solar Cells (Academic Press, New York 1983) p. 210
See [15] p. 119
A. Goetzberger, B. Voss, J. Knobloch: Sonnenenergie: Photovoltaik (Teubner, Stuttgart 1997) p. 94
H.R.J. Van Overstraeten, R.P. Mertens: Physics, Technology, and Use of Photovoltaics (Adam Hilger, Bristol 1986) p. 22
M.A. Green: Solar Cells (Prentice-Hall, Englewood Cliffs 1982) p. 143
See [18] p. 17
K.W. Böer: Phys. Stat. Sol. 87, 719 (1985)
R. Brendel: In: Proc. 12th E.C. Photovoltaic Solar Energy Conf., ed. by R. Hill, W. Palz, P. Helm (H.S. Stevens, Associates, Bedford, UK 1994) p. 1339
Central Research Laboratories, Kaneka Corporation, 2–80 Yoshida-cho, Hyogo-ku, Kobe 651, Japan
S.J. Fonash: Solar Cell Device Physics (Academic Press, London 1981) p. 182
O. Madelung: Semiconductors–Basic Data (Springer, Heidelberg 1996) p. 18
J.M. Asensi, J. Merten, C. Voz, J. Andreu: J. Appl. Phys. 85, 2939 (1999)
M. Goerlitzer, P. Torres, C. Droz, A. Shah: Solar Energy Materials Solar Cells 60, 195 (2000)
N. Wyrsch, L. Feitknecht, C. Droz, P. Torres, A. Shah, A. Poruba, M. Vanecek: J. Non-Cryst. Solids 266–269, 1099 (2000)
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84.60.Jt; 85.60.Bt
An erratum to this article is available at http://dx.doi.org/10.1007/s00339-006-3696-8.
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Taretto, K., Rau, U. & Werner, J. Closed-form expression for the current/ voltage characteristics of pin solar cells. Appl Phys A 77, 865–871 (2003). https://doi.org/10.1007/s00339-003-2257-7
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DOI: https://doi.org/10.1007/s00339-003-2257-7