Skip to main content
SpringerLink
Log in

A model of AlN layer formation during ion nitriding of Al

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

A diffusion model of AlN layer formation by ion nitriding of Al is proposed based on the analysis of atomic transport during the process. This model is reduced to the following. Implantation of N ions to the surface of the specimen, named the reaction zone; extraction of Al from the substrate; diffusion transport of Al to the reaction zone through an AlN layer formed during the process; formation and growth of AlN in the reaction zone; sputtering of the AlN layer. Equations controlling the growth process have been obtained.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K.-T. Rie, E. Menthe, A. Matthews, K. Legg, J. Chin: MRS Bull. 21, 46 (1996)

    Article  Google Scholar 

  2. H.-Y. Chen, H.-R. Stock, P. Mayer: Surf. Coat. Technol. 74–75, 412 (1995)

    Google Scholar 

  3. K.-T. Rie, F. Schantbaum: Metalloberfläche 44, 732 (1990)

    Google Scholar 

  4. T. Arai, H. Fujita, H. Tachikawa: In: Proc. Int. Conf. Ion Nitriding, Cleveland, September 1986 (ASM International, Metals Park, OH 1987) p. 37

  5. S. Parascandola, O. Kruse, W. Möller: Appl. Phys. Lett. 75, 1851 (1999)

    Article  ADS  Google Scholar 

  6. S. Parascandola, T. Telbizova, O. Kruse, W. Möller: Nucl. Instrum. Methods B 161–163, 406 (2000)

    Article  ADS  Google Scholar 

  7. T. Telbizova, S. Parascandola, F. Prokert, E. Richter, W. Möller: Nucl. Instrum. Methods B 161–163, 690 (2000)

    Article  ADS  Google Scholar 

  8. K. Nordland, M. Ghaly, T. Diaz de la Rubia, J. Tarus: Phys. Rev. B 57, 7556 (1998)

    Article  ADS  Google Scholar 

  9. G. Busse, H. Hansan, U. Linke, T. Michaly: Phys. Rev. Lett. 85, 326 (2000)

    Article  ADS  Google Scholar 

  10. T. Telbizova, S. Parascandola, U. Kreissig, R. Güntzel, W. Möller: Appl. Phys. Lett. 76, 1404 (2000)

    Article  ADS  Google Scholar 

  11. T. Telbizova, E. Richter, W. Möller: unpublished

  12. A.D. Smigelkas, E.O. Kirkendall: Trans. AIME 171, 130 (1947)

    Google Scholar 

  13. V.I. Dimitrov, J. D’Haen, G. Knuyt, C. Quasyhaegens, L. Stals: Appl. Phys. A 63, 475 (1996)

    Article  ADS  Google Scholar 

  14. V.I. Dimitrov, J. D’Haen, G. Knuyt, C. Quasyhaegens, L. Stals: Phys. Status Solidi A 159, 405 (1997)

    Article  ADS  Google Scholar 

  15. V.I. Dimitrov, G. Knuyt, L. Stals, J. D’Haen, C. Quasyhaegens: Appl. Phys. A 67, 183 (1998)

    Article  ADS  Google Scholar 

  16. V.I. Dimitrov, J. D’Haen, G. Knuyt, C. Quasyhaegens, L. Stals: Surf. Coat. Technol. 99, 234 (1998)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, 01314, Dresden, Germany

    V.I. Dimitrov

  2. Fatih University Istanbul, 34900, Büyakcekmece, Istanbul, Turkey

    V.I. Dimitrov

Authors
  1. V.I. Dimitrov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V.I. Dimitrov.

Additional information

PACS

68.65.-k; 68.65.Ac

Rights and permissions

Reprints and permissions

About this article

Cite this article

Dimitrov, V. A model of AlN layer formation during ion nitriding of Al. Appl Phys A 79, 1829–1832 (2004). https://doi.org/10.1007/s00339-003-2253-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-003-2253-y

Keywords

Search

Navigation