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Dynamics of photoluminescence in GaInNAs saturable absorber mirrors

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Abstract

Femtosecond time-resolved photoluminescence experiments have been used to study the nonlinear dynamics of novel monolithic GaInNAs/GaAs semiconductor saturable absorber mirrors at 1.08 and 1.55 μm. The mirror structures were grown using molecular-beam epitaxy followed by Ni-ion implantation and thermal annealing. We present photoluminescence measurements showing the critical role of post-growth processing on the response time of GaInNAs/GaAs absorber mirrors.

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Authors and Affiliations

  1. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, 33101, Tampere, Finland

    A. Härkönen , T. Jouhti , B. Ryvkin  & O.G. Okhotnikov

  2. Institute of Material Chemistry, Tampere University of Technology, P.O. Box 541, 33101, Tampere, Finland

    N.V. Tkachenko  & H. Lemmetyinen

  3. Accelerator Laboratory, Helsinki University, P.O. Box 43, 00014, Helsinki, Finland

    T. Sajavaara  & J. Keinonen

Authors
  1. A. Härkönen
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  2. T. Jouhti
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  3. N.V. Tkachenko
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  4. H. Lemmetyinen
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  5. B. Ryvkin
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  6. O.G. Okhotnikov
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  7. T. Sajavaara
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  8. J. Keinonen
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Correspondence to A. Härkönen .

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PACS

42.65.Re; 42.50.Nn; 42.70.Nq

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Härkönen , A., Jouhti , T., Tkachenko , N. et al. Dynamics of photoluminescence in GaInNAs saturable absorber mirrors. Appl Phys A 77, 861–863 (2003). https://doi.org/10.1007/s00339-003-2240-3

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  • DOI: https://doi.org/10.1007/s00339-003-2240-3

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