Skip to main content
SpringerLink
Log in

Crystallographic orientation dependence of the dielectric constant in polymorphic BaNb2O6 thin films deposited by laser ablation

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Well-crystallized barium metaniobate (BaNb2O6) thin films were fabricated on fused quartz substrates by pulsed laser deposition. The influence of substrate temperature and oxygen pressure on the crystal structure and preferred orientation were studied to understand the growth mechanism of BaNb2O6 thin films. The films formed at 600 °C at an oxygen pressure of 100 mTorr exhibited predominantly the orthorhombic (040) orientation, and turned to the orthorhombic (230) orientation at 800 °C. It was found that (220)-oriented hexagonal thin films were formed at 600 °C at an oxygen pressure less than 50 mTorr. The dielectric constant of the BaNb2O6 thin films was measured by scanning microwave microscopy (SMM). Preferentially (230)-oriented orthorhombic and (220)-oriented hexagonal BaNb2O6 thin films were shown to have significantly enhanced dielectric constants of 47.8 and 56.7, respectively. This could be attributed to the dependence of the dielectric constant on crystallographic orientation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P.V. Lenzo, E.G. Spencer, A.A. Ballman: Appl. Phys. Lett. 11, 23 (1967)

    Article  ADS  Google Scholar 

  2. R.R. Neurgaonkar, W.K. Cory: J. Opt. Soc. Am. B: Opt. Phys. 3, 274 (1986)

    Article  ADS  Google Scholar 

  3. M.H. Francombe: Acta Cryst. 13, 131 (1960)

    Article  Google Scholar 

  4. L.M. Kovba, L.N. Lykova, Z.Y. Kulikova, P.P. Leshchenko, I.P. Zapasskaya: Moscow Univ. Chem. Bull. 33, 69 (1978)

    Google Scholar 

  5. O. Yamaguchi, K. Matsui, K. Shimizu: J. Am. Ceram. Soc. 68, C173 (1985)

  6. D.W. Kim, H.B. Hong, K.S. Hong, C.K. Kim, D.J. Kim: Jpn. J. Appl. Phys. 41, 6045 (2002)

    Article  ADS  Google Scholar 

  7. D.W. Kim, J.R. Kim, S.H. Yoon, K.S. Hong, C.K. Kim: J. Am. Ceram. Soc. 85, 2759 (2002)

    Article  Google Scholar 

  8. F.J. Wu, T.Y. Tseng: J. Am. Ceram. Soc. 81, 439 (1998)

    Article  Google Scholar 

  9. R.B. Van Dover, L.F. Schneemeyer, R.M. Fleming: Nature 392, 162 (1998)

    Article  ADS  Google Scholar 

  10. H.M. O’Bryan, R.K. Watts, S. Hou, Z.X. Ma: Integr. Ferroelectr. 15, 155 (1997)

    Article  Google Scholar 

  11. S. Hyun, A. Kim, J. Kwon, K. Char: Jpn. J. Appl. Phys. 40, 6510 (2001)

    Article  ADS  Google Scholar 

  12. J.H. Lee, S. Hyun, K. Char: Rev. Sci. Instrum. 72, 1425 (2001)

    Article  ADS  Google Scholar 

  13. Y. Repelin, E. Husson, H. Brusset: Spectrochim. Acta 35A, 937 (1979)

    Article  Google Scholar 

  14. M.M.T. Ho, C.L. Mak, K.H. Wong: J. Eur. Ceram. Soc. 19, 1115 (1999)

    Article  Google Scholar 

  15. O.M. Hussain, K. Srinivasa Rao, K.V. Madhuri, C.V. Ramana, B.S. Naidu, S. Pai, J. John, R. Pinto: Appl. Phys. A 75, 417 (2002)

    Article  ADS  Google Scholar 

  16. B.G. Hyde, S. Anderson: Inorganic Crystal Structures (Wiley, New York 1989)

  17. R.S. Roth, J.L. Waring: J. Res. Natl. Bur. Stand. 65, 337 (1961)

    Article  Google Scholar 

  18. O. Nakagawara, Y. Toyota, M. Kobayashi, Y. Yoshino, Y. Katayama, H. Tabata, T. Kawai: J. Appl. Phys. 80, 388 (1996)

    Article  ADS  Google Scholar 

  19. C. Gao, X.D. Xiang: Rev. Sci. Instrum. 69, 3846 (1998)

    Article  ADS  Google Scholar 

  20. J.J. Araiza, M. Cardenas, C. Falcony, V.H. Mendez-Garcia, M. Lopez, G. Contreras-Puente: J. Vac. Sci. Technol. A 16, 3305 (1998)

    Article  ADS  Google Scholar 

  21. J. Lin, N. Masaaki, A. Tsukune, M. Yamada: Appl. Phys. Lett. 74, 2370 (1999)

    Article  ADS  Google Scholar 

  22. T. Sakai, T. Watanabe, Y. Cho, K. Matsuura, H. Funakubo: Jpn. J. Appl. Phys. 40, 6481 (2001)

    Article  ADS  Google Scholar 

  23. P.C. Joshi, M.W. Cole: J. Appl. Phys. 86, 871 (1999)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul, 151-742, South Korea

    D.W. Kim & K.S. Hong

  2. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio, 44106-7204, USA

    C.H. Kim

  3. School of Physics and Center for Strongly Correlated Materials Research, Seoul National University, Seoul, 151-742, South Korea

    K. Char

Authors
  1. D.W. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K.S. Hong
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. C.H. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. Char
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K.S. Hong.

Additional information

PACS

77.55.+f; 77.84.Dy

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kim, D., Hong, K., Kim, C. et al. Crystallographic orientation dependence of the dielectric constant in polymorphic BaNb2O6 thin films deposited by laser ablation. Appl. Phys. A 79, 677–680 (2004). https://doi.org/10.1007/s00339-003-2232-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-003-2232-3

Keywords

Search

Navigation