Applied Physics A

, Volume 77, Issue 6, pp 769–774

Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor

Regular Paper

DOI: 10.1007/s00339-003-2229-y

Cite this article as:
Chang, KW. & Wu, JJ. Appl Phys A (2003) 77: 769. doi:10.1007/s00339-003-2229-y

Abstract

Catalytic growth of 1-D GaN nanostructures is achieved at temperatures from 550 to 850 °C using NH3 and gallium acetylacetonate. Structural characterization of the 1-D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 °C, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1-D GaN nanostructures via the VLS mechanism. Possible mechanisms for forming nanoneedles at low temperatures are proposed.

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Copyright information

© Springer-Verlag 2003

Authors and Affiliations

  1. 1.Department of Chemical EngineeringNational Cheng Kung UniversityTainanTaiwan

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