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Growth of polycrystalline LaNi1-xCoxO3 (x =0.3,0.5) thin films on Si(100) by pulsed laser deposition

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Abstract

Polycrystalline LaNi1-xCoxO3 (x=0.5,0.3) thin films have been deposited on polished Si(100) substrates by pulsed laser deposition. The films are grown at 650 °C in ambient oxygen pressure of 0.4 mbar with an incident laser fluence of 1.5 J/cm2 delivered by a KrF excimer laser. The lattice parameters of the as-grown films are slightly larger (0.05–0.4%) than those of the powders used to prepare the targets. The films exhibit weak texturing along the (012) direction. The low-temperature magnetic properties of the films, i.e. the coercive force, the remanence and the saturation magnetization, are enhanced compared to the powders. Furthermore, the x=0.3 film exhibits a low, almost temperature-independent resistivity above 200 K [ϱ(300 K)∼30 μΩ cm] and thus we propose it as a potential candidate material for electrode applications, e.g. in ferroelectric devices.

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Authors and Affiliations

  1. Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1527, Vasilika Vouton, 71110, Heraklion, Crete, Greece

    J. Androulakis, A. Klini, A. Manousaki, G. Violakis & J. Giapintzakis

  2. Department of Chemistry, University of Crete, Leoforos Knossou, 71409, Heraklion, Crete, Greece

    J. Androulakis

  3. Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 71003, Heraklion, Crete, Greece

    J. Giapintzakis

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  1. J. Androulakis
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  2. A. Klini
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  3. A. Manousaki
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  4. G. Violakis
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  5. J. Giapintzakis
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Correspondence to J. Giapintzakis.

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PACS

68.55.-a; 73.61.-r; 81.15.Fg

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Androulakis, J., Klini, A., Manousaki, A. et al. Growth of polycrystalline LaNi1-xCoxO3 (x =0.3,0.5) thin films on Si(100) by pulsed laser deposition. Appl. Phys. A 79, 671–675 (2004). https://doi.org/10.1007/s00339-003-2177-6

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  • DOI: https://doi.org/10.1007/s00339-003-2177-6

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