Abstract
AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag2Te and Ge2Sb2Te5 crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge. The refractive index n and the extinction coefficient k of the AgInTeSbGe film in the amorphous and crystalline states were measured. The reflectivity contrast of the AgInTeSbGe phase-change optical disk was greater than %30 in almost the whole visible region. A minimum recording mark of about 220 nm in length was recorded using the AgInTeSbGe thin film as the recording medium. The reflectivity contrast of the minimum recording mark was about %25.
Similar content being viewed by others
References
E.R. Meinders, M.H.R. Lankhorst, H.J. Borg, M.J. Dekker: Jpn. J. Appl. Phys. 40, 1558 (2001)
H. Iwasaki, Y. Ide, M. Harigaya, Y. Kageyama, I. Fujimura: Jpn. J. Appl. Phys. 31, 461 (1992)
H. Iwasaki, M. Harigaya, O. Nonoyama, Y. Kageyama, M. Takahashi, K. Yamada, H. Deguchi, Y. Ide: Jpn. J. Appl. Phys. 32, 5241 (1993)
L.-H. Chou, Y.-Y. Chang, Y.-C. Chai, S.-Y. Wang: Jpn. J. Appl. Phys. 40, 3375 (2001)
L.-H. Chou, Y.-Y. Chang, Y.-C. Chai, S.-Y. Wang: Jpn. J. Appl. Phys. 40, 4924 (2001)
T. Matsunaga, Y. Umetani, N. Yamada: Phys. Rev. B 64, 4116 (2001)
H. Tashiro, M. Harigaya, Y. Kageyama, K. Ito, M. Shinotsuka, K. Tani, A. Watada, N. Yiwata, Y. Nakata, S. Emura: Jpn. J. Appl. Phys. 41, 3758 (2002)
J. Tominaga, T. Handa, S. Haratani, S. Takayama: Jpn. J. Appl. Phys. 32, 1980 (1993)
T. Handa, J. Tominaga, S. Haratani, S. Takayama: Jpn. J. Appl. Phys. 32, 5226 (1993)
J. Tominaga, T. Kikukawa, M. Takahashi, R.T. Phillips: J. Appl. Phys. 82, 3214 (1997)
H. Inoue, H. Hirata, T. Kato, H. Shingai, H. Utsunomiya: Jpn. J. Appl. Phys. 40, 1641 (2001)
T.H. Jeong, M.R. Kim, H. Seo, S.J. Kim, S.Y. Kim: J. Appl. Phys. 86, 774 (1999)
B. Liu, H. Ruan, F.-X. Gan: Chin. J. Mater. Res. 16, 413 (2002); in Chinese
F.-S. Jiang, M. Okuda: Jpn. J. Appl. Phys. 30, 97 (1991)
F.-X. Gan: J. Non-Cryst. Solids 256–257, 176 (1999)
J.-Y. Li, F.-X. Gan: Thin Solid Films 402, 232 (2002)
F.-X. Gan: Digital Optical Disk Storage Technology (Science Press, Shanghai 1998); in Chinese
N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, M. Takao: J. Appl. Phys. 69, 2849 (1991)
B. Liu, H. Ruan, F.-X. Gan: Chin. Phys. 11, 293 (2002)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
42.70.Ln; 61.72.Ww; 78.66.Li; 81.30.Hd
Rights and permissions
About this article
Cite this article
Liu, B., Gan, FX. Optical properties and crystallization of AgInTeSbGe phase-change optical disk media. Appl Phys A 77, 905–909 (2003). https://doi.org/10.1007/s00339-003-2159-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-003-2159-8