Abstract.
It has been demonstrated that He+ ion irradiation is an excellent tool for modifying magnetic properties, like the magnetic anisotropy, the interlayer exchange coupling strength and the exchange bias field of ultra-thin magnetic layered systems. This paper summarizes the effects of ion irradiation on exchange bias systems. As a first example, for possible applications of the ion induced magnetic effects, the realization of an angle sensing device is described.
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Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003
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ID="*"Corresponding author. Fax: +49-631-205-4095, E-mail: fassbend@physik.uni-kl.de
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ID="**"Present address: Université de Rouen, Rouen, France
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Fassbender, J., Poppe, S., Mewes, T. et al. Ion irradiation of exchange bias systems for magnetic sensor applications . Appl Phys A 77, 51–56 (2003). https://doi.org/10.1007/s00339-002-2064-6
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DOI: https://doi.org/10.1007/s00339-002-2064-6