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Trapping centers in undoped GaS layered single crystals

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Abstract

Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10–300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2×10-21, 2.9×10-23, 2.4×10-21, 8.0×10-9, 1.9×10-9 and 4.3×10-10 cm2 for the capture cross sections and 1.6×1013, 5.0×1012, 7.3×1012, 1.2×1014, 8.9×1013 and 2.6×1013 cm-3 for the concentrations, respectively.

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Authors and Affiliations

  1. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey

    N.M. Gasanly  & N.S. Yüksek

  2. Department of Physics, Bilkent University, 06533, Ankara, Turkey

    A. Aydınlı  & Ö. Salihoğlu

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  1. N.M. Gasanly
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  2. A. Aydınlı
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  3. N.S. Yüksek
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  4. Ö. Salihoğlu
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Correspondence to N.M. Gasanly .

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PACS

71.55.-i; 72.20.Jv; 72.80.Jc

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Gasanly , N., Aydınlı , A., Yüksek , N. et al. Trapping centers in undoped GaS layered single crystals. Appl Phys A 77, 603–606 (2003). https://doi.org/10.1007/s00339-002-2035-y

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  • DOI: https://doi.org/10.1007/s00339-002-2035-y

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