Abstract.
Novel micrometer-sized Si-Sn-O structures with SiO2 nanowires (SiONWs) growing from their surfaces have been achieved at about 980 °C on Si (111) wafer catalyzed by Sn vapor generated from Sn powders. The Si wafer itself served as a silicon source in the reaction. The micrometer-sized structures, with diameters of several micrometers to several tens of micrometers consisted of Sn, Si and O. The amorphous SiONWs growing from the surface of the micrometer-sized structures were smooth, with diameters about 120 nm and with a composition close to that of SiO2. The growth mechanism of these novel structures is discussed briefly.
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Received: 30 July 2002 / Accepted: 18 September 2002 / Published online: 4 December 2002
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Sun, S., Meng, G., Gao, T. et al. Micrometer-sized Si-Sn-O novel structures with SiONWs on their surfaces . Appl Phys A 76, 999–1002 (2003). https://doi.org/10.1007/s00339-002-1996-1
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DOI: https://doi.org/10.1007/s00339-002-1996-1