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Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

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Abstract.

We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL) and electroluminescence of the In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As multiple quantum well (MQW) laser structure with InGaAlAs barrier layers provided by the digital-alloy technique. The SiO2- (Si3N4-) capped samples followed by the RTA exhibited a significant improvement of PL intensity without any appreciable shifts in PL peak energy for settings of up to 750 °C (800 °C) for 45 s. This improvement is attributed to the annealing of nonradiative defects in InAlAs layers of digital-alloy InGaAlAs and partially those near the heterointerfaces of the digital-alloy layers. The InGaAs/InGaAlAs MQW laser diodes fabricated on the samples annealed at 850 °C show a hugely improved lasing performance.

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Authors and Affiliations

  1. Department of Information and Communications, Kwangju Institute of Science and Technology, Gwangju 500-712, Korea, , , , , , KR

    J.S. Yu, J.D. Song, J.M. Kim, S.J. Bae & Y.T. Lee

  2. School of Electrical and Computer Engineering, Ajou University, Suwon 442-749, Korea, , , , , , KR

    H. Lim

Authors
  1. J.S. Yu
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  2. J.D. Song
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  3. J.M. Kim
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  4. S.J. Bae
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  5. Y.T. Lee
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  6. H. Lim
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Received: 2 September 2002 / Accepted: 3 September 2002 / Published online: 17 December 2002

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ID="*"Corresponding author. Fax: +82-62/970-2204, E-mail: ytlee@kjist.ac.kr

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Yu, J., Song, J., Kim, J. et al. Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing . Appl Phys A 76, 979–982 (2003). https://doi.org/10.1007/s00339-002-1978-3

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  • DOI: https://doi.org/10.1007/s00339-002-1978-3

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