Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

Abstract.

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O+ or B+) implanted samples are gamma-irradiated with 60Co. Gamma irradiation creates electron levels at the SiSiO2 interface of the samples in a different way depending on the type of the previously implanted atoms (O+ or B+). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples.

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Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003

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Kaschieva, S., Rebohle, L. & Skorupa, W. Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation . Appl Phys A 76, 823–826 (2003). https://doi.org/10.1007/s00339-002-1963-x

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  • PACS: 61.82.Fk; 61.72.Tt