Abstract.
The intense, ultra-fast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g. Xe44+ and Au53+) to produce the ultra-fast electronic excitation. The observation of excitonic features in the luminescence from these nanostructures has recently been reported. In this paper we report the dispersion of the excitonic features with laser excitation energy. A phonon-scattering process is proposed to explain the observed dispersion.
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Received: 2 October 2001 / Accepted: 18 July 2002 / Published online: 25 October 2002
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ID="*"Corresponding author. Fax: +1-925/423-7040, E-mail: Hamza1@llnl.gov
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ID="**"Present address: University of California, Lawrence Berkeley National Laboratory, Berkeley, CA 94 720, USA
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Hamza, A., Newman, M., Thielen, P. et al. Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation . Appl Phys A 76, 313–317 (2003). https://doi.org/10.1007/s00339-002-1814-9
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DOI: https://doi.org/10.1007/s00339-002-1814-9