Abstract.
The conduction band electronic structure and the electron dynamics of the clean InSb(111)2×2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, τ∼12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism.
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Received: 9 May 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002
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Grishin, M., Karlsson, H., Månsson, M. et al. Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface . Appl Phys A 76, 299–302 (2003). https://doi.org/10.1007/s00339-002-1811-z
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DOI: https://doi.org/10.1007/s00339-002-1811-z