Abstract
The early oxidation stages of hydrogen-terminated single-crystalline (100) silicon have been studied by X-ray photoemission spectroscopy, following the evolution of the Si 2p and O 1s signals after exposure to N2:N2O ambient at 850 °C for different durations. Evidence is given that the usual analysis of the film in terms of the Si 2p peak leads to inconsistencies, related to the presence in the film of non-siloxanic bridges, as oxygen-rich defects (like hydroxyl terminations or peroxo bridges) or oxygen-deficient defects (like amino bridges). Information on the film structure is obtained by combining the analysis of the Si 2p peak with that of the O 1s peak.
Similar content being viewed by others
References
International Technology Roadmap for Semiconductors (Semiconductor Industry Association (SIA), San Jose, CA 1999)
T. Aoyama, K. Goto, T. Yamazaki, T. Ito: J. Vac. Sci. Technol. 14, 2909 (1996)
A. Chin, B.C. Lin, W.J. Chen, Y.B. Lin, C. Tsai: IEEE Electron Dev. Lett. 19, 426 (1998)
G.F. Cerofolini, M. Camalleri, C. Galati, S. Lorenti, L. Renna, O. Viscuso, G.G. Condorelli, I.L. Fragalà: Appl. Phys. Lett. 79, 2378 (2001)
F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarnoff, G. Hollinger: Phys. Rev. B 38, 6084 (1988)
A. Pasquarello, M.S. Hybertsen, R. Car: Phys. Rev. Lett. 74, 1024 (1995); Phys. Rev. B 53, 10942 (1996)
S. Iwata, A. Ishizaka: J. Appl. Phys. 79, 6653 (1996)
F.R. McFeely, K.Z. Zhang, M.M. Banaszak Holl, S. Lee, J.E. Bender IV: J. Vac. Sci. Technol. B 14, 2824 (1996)
M. Niwano, H. Katakura, Y. Takeda, Y. Takakuwa, N. Miyamoto, M. Maki: J. Vac. Sci. Technol. A 10, 339 (1992)
F. Jolly, F. Rochet, G. Dufour, C. Grupp, A. Taleb-Ibrahimi: Surf. Sci. 463, 102 (2000)
G.F. Cerofolini, C. Bongiorno, M. Camalleri, G.G. Condorelli, I.L. Fragalà, C. Galati, S. Lorenti, L. Renna, C. Spinella, O. Viscuso: Appl. Phys. A 75, 585 (2002)
D.A. Shirley: Phys. Rev. 55, 4709 (1972)
G.F. Cerofolini, C. Galati, L. Renna, O. Viscuso, M. Camalleri, S. Lorenti, G.G. Condorelli, I.L. Fragalà: J. Phys. D 35, 1032 (2002)
T. Umeda, S. Yamasaki, M. Nishizawa, T. Yasuda, K. Tanaka: Appl. Surf. Sci. 162–163, 299 (2000)
C. Poncey, F. Rochet, G. Dufour, H. Roulet, F. Sirotti, G. Parnaccione: Surf. Sci. 338, 143 (1995)
R.I.G. Uhrberg, E. Landemark, Y.-C. Chao: J. Electron Spectrosc. 75, 197 (1995)
A. Dinger, C. Lutterloh, J. Küppers: Surf. Sci. 482–485, 227 (2001)
T.-W. Pi, J.-F. Wen, C.-P. Ouyang, R.-T. Wu, G.K. Wertheim: Surf. Sci. 478, L333 (2001)
M.M. Banaszak Holl, F.R. McFeely: Phys. Rev. Lett. 71, 2441 (1993)
K. Raghavachari, J. Eng Jr.: Phys. Rev. Lett. 84, 935 (2000)
K.S. Schneider, Z. Zhang, M.M. Banaszak Holl, B.G. Orr, U.C. Pernisz: Phys. Rev. Lett. 85, 602 (2000)
V.A. Radtsig, V.A. Khalif: Kinet. Katal. 20, 705 (1979)
J.R. Shallenberger, D.A. Cole, S.W. Novak: J. Vac. Sci. Technol. A 17, 1086 (1999)
J.K. Rudra, W.B. Fowler: Phys. Rev. B 35, 8223 (1987)
D.C. Allan, M.P. Teter: J. Am. Ceram. Soc. 73, 3247 (1990)
M. Boero, A. Pasquarello, J. Sarnthein, R. Car: Phys. Rev. Lett. 78, 887 (1997)
G.F. Cerofolini, N. Re: In: Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices, ed. by E. Garfunkel, E. Gusev, A. Vul’ (Kluwer, Dordrecht 1998) p. 117
G.-M. Rignanese, A. Pasquarello, J.-C. Charlier, X. Gonze, R. Car: Phys. Rev. Lett. 79, 5174 (1997)
M.F. Guest, P. Sherwood: GAMESS User’s Guide and Reference Manual (Daresbury Laboratory, Daresbury 1992)
G.F. Cerofolini, L. Meda, N. Re: Appl. Phys. A 72, 603 (2001)
Lu et al.: Appl. Phys. Lett. 63, 2941 (1993)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
82.65.+r; 68.35.Fx; 68.35.Dv; 79.60.Jv
Rights and permissions
About this article
Cite this article
Cerofolini , G., Galati , C., Renna , L. et al. The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. II. Silicon and oxygen bonding states. Appl Phys A 77, 515–521 (2003). https://doi.org/10.1007/s00339-002-1480-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-002-1480-y