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Electrical properties of polyaniline (PANI)-porous silicon (PS) heterostructure

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The present work reports fabrication of polyaniline (PANI)-porous silicon (PS) heterostructure obtained by PANI coating on PS using vacuum coating deposition technique. Electrical properties are studied through the measurement of current (I)–voltage (V) characteristics. Some parameters (viz. ideality factor, barrier height, series resistance) are calculated from the I-V plots. Fitting of these curves is done with the thermionic emission (TE) and Cheung’s method. It is found that Cheung’s method provides better knowledge about the heterostructure in terms of series resistance. The heterostructure comes out as an electrically active material with minimal series resistance of 23.53 kΩ resulting high-driven electric current. The I–V of the heterostructure follows space charge limited conduction (SCLC) mechanism due to the presence of traps or imperfection in the heterostructure. Prior to electrical measurement the device is characterized through field emission scanning electron microscope (FESEM), UV–vis–NIR reflectance, photoluminescence (PL) and Raman spectra for morphological and optical properties. FESEM shows the modified PS structure after PANI deposition revealing short-chained PANI molecules due to thermal treatment. UV–vis-NIR shows lower reflectance of the heterostructure due to impregnation of PANI to the pores of PS resulting change in refractive index. PANI-PS shows quenched PL peak. Raman spectra complement the FESEM results.

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Acknowledgements

Authors acknowledge University Grant Commission (Project Grant No. 40-438/2011 SR), Department of Science and Technology (Project Grant No. DST/TSG/PT2009/96) and DST-FIST for providing instrumental facility through project grants. Authors are thankful to IIT Guwahati for UV–vis–NIR reflectance measurements and to Dr. M. P. C Kalita, Department of Physics, Gauhati University for PL measurements and technical support.

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  1. Department of Physics, CMP Research Laboratory, Gauhati University, Guwahati, 781014, India

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Nath, P., Sarkar, D. Electrical properties of polyaniline (PANI)-porous silicon (PS) heterostructure. Polym. Bull. 81, 2329–2343 (2024). https://doi.org/10.1007/s00289-023-04820-7

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