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High-voltage transition studies from rectification to resistive switching in Ag/PVDF/Au capacitor-like structures

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Abstract

This work reports the transition from rectifying type to resistive switching in semicrystalline, unpoled intrinsic form of polyvinylidene fluoride (PVDF) thin films in Ag/PVDF/Au capacitor-like structures. The transition is noted after the breakdown of Schottky barrier at electric fields of 3 MV/cm along with the changeover from asymmetric to symmetric I−V curves. The sharp change from asymmetric to symmetric I−V loops further revealed bipolar-resistive switching. The asymmetric and symmetric I−V transport mechanisms are evaluated with the Fowler–Nordheim tunneling and space-charge-limited current mechanisms at high voltages. Furthermore, the resistive-switching phenomena are attributed to the filament formation from the ohmic response of the low-resistance state.

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Acknowledgements

We would like to acknowledge the DAE-BRNS with Sanction No: 2012/20/37P/09/BRNS, DST with sanction Dy. No. SERB/F/0724/2013-2014, UGC-MRP/F.No-41-846/2012 (SR), UGC-SAP F.530/15/DRS/2009 and also Central Instrumentation Facility (CIF) at Pondicherry University. K. Pramod would like to acknowledge the UGC for Rajiv Gandhi National Fellowship.

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  1. Department of Physics, School of Physical Chemical and Applied Sciences, Pondicherry University, Kalapet, Puducherry, 605014, India

    Kadukatty Pramod & R. B. Gangineni

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  1. Kadukatty Pramod
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Correspondence to R. B. Gangineni.

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Pramod, K., Gangineni, R.B. High-voltage transition studies from rectification to resistive switching in Ag/PVDF/Au capacitor-like structures. Polym. Bull. 75, 2769–2778 (2018). https://doi.org/10.1007/s00289-017-2178-9

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  • DOI: https://doi.org/10.1007/s00289-017-2178-9

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