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Short-range order and electronic structure of radiation-damaged zircon according to X-ray photoelectron spectroscopy

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Abstract

Core-level and valence-band X-ray photoelectron spectroscopy was employed to study the dose-dependent radiation effects in the short-range order and the electronic structure of natural U, Th-bearing zircon near-surface layers. Single crystals from different localities (Ratanakiri, Cambodia; Mud Tank, Australia; Highlands, Sri Lanka) exhibiting wide variations in the accumulated radiation dose D≈(0 ÷ 9.2)·1018 α-decays/g was investigated. The dose values obtained by electron probe microanalysis and Raman micro-spectroscopy were used to correlate the samples with the two percolation transitions (p1, p2) in the amorphous-crystalline structure of damaged zircon. The dose-dependent variations in Eb (530.9–531.3, 101.7–102.4, 182.8- 183.3 eV) and FWHM (1.32–2.57, 1.47–1.77, 1.16 -1.55 eV) of the O1s, Si2p, and Zr3d5/2 core levels, respectively, were attributed to changes in the ensemble of non-equivalent short-range order structures. An increase in the dose resulted in the complication of the oxygen sublattice, with the following nearest environments of O atoms: (1) O (Si, [8]Zr, [8]Zr), Eb = 530.8–531.2 eV, the amount of > ~3.5 apfu (at D < p1); (2) O (Si, Si) and/or O (Si, Si, [8]Zr), Eb = 532.6 eV, the amount of ~ 0.5 ÷ 0.8 apfu (at p1 < D < p2); (3) O (Si, [7]Zr, [7]Zr), Eb = 531.6 eV, determined when the O (Si, [8]Zr, [8]Zr) amount is of ~ 1.7 apfu (at D > p2). For the first time, under an increase in the radiation dose, the oppositely directed changes in the effective charges of Si and Zr cations were detected in damaged zircon. This phenomenon was assigned to an increase in the content of the short-range order fragments characteristic of pure oxides SiO2 (namely, Si-O-Si) and ZrO2 (namely, [7]Zr) as well as to the influence of the anions O (Si, Si, [8]Zr), and the assignment was independently confirmed by the valence band analysis. The sequence of transformations in the Si-O and Zr-O sublattices was shown to be not concurrent: a partial polymerization of SiO4 tetrahedra occurs mainly at low and medium doses (D < p2) both in the crystalline and amorphous fractions, while the 7-coordinated atoms [7]Zr are mainly observed at higher doses (D > p2) in the amorphous fraction.

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Acknowledgements

This work was supported by the Russian Foundation for Basic Research (RFBR), project 18-05-01153. Electron probe microanalysis was supported by the Russian Science Foundation (RSF), project 16-17-10283-P. The authors are grateful to Prof. L.Nasdala for providing the Ratanakiri zircon sample for research. We would like to thank Thomas A. Beavitt and Natalia G. Popova for their linguistic support.

Funding

The work was supported by the Russian Foundation for Basic Research, project 18-05-01153. Electron probe microanalysis was supported by the Russian Science Foundation, project 16-17-10283-P.

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Conceptualization: Yu.V.S; Methodology: D.A.Z, I.S.Z, A.I.K, S.O.C; Formal analysis and investigation: I.S.Z, A.I.K, D.A.Z, Yu.V.S; Writing—original draft preparation: Yu.V.S; Writing—review and editing: D.A.Z, S.L.V, Yu.V.S, I.S.Z, A.I.K; Funding acquisition: Yu.V.S, S.L.V; Resources: S.O.C.

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Correspondence to Yuliya V. Shchapova.

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Shchapova, Y.V., Zamyatin, D.A., Votyakov, S.L. et al. Short-range order and electronic structure of radiation-damaged zircon according to X-ray photoelectron spectroscopy. Phys Chem Minerals 47, 51 (2020). https://doi.org/10.1007/s00269-020-01120-8

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